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DiodesZetex P-Channel MOSFET 2.5 A 20 V Enhancement 3-Pin SOT-323 DMP2165UW

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model DMP2165UW
Width 1.35mm
Mount Type Surface
Series DMP2165UW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 2.5A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 180mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 700mW
Typical Gate Charge Qg @ Vgs 3.5nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf -1.1V

Key Features

  • This MOSFET features low on-resistance for high efficiency.
  • It has low input capacitance for faster switching speeds.
  • Supports a maximum power dissipation of 700 mW for reliable operation.
  • The device comes in a compact 3-Pin SOT-323 surface mount package.
  • Operates in the temperature range of -55°C to 150°C, suitable for various conditions.
  • Includes automotive AEC-Q101 qualification for automotive system use.
  • Offers a maximum gate-source voltage of 12 V and a typical gate charge of 3.5 nC.
  • Forward voltage is -1.1 V for conduction control.

Product Description

DiodesZetex DMP2165UW P-Channel MOSFET is a high-performance discrete semiconductor device with a maximum continuous drain current of 2.5 A and a maximum drain-source voltage of 20 V. It employs an enhancement mode channel for efficient switching and integrates a low on-resistance (180 mΩ) characteristic to minimize power losses during operation.

Packaged in a compact 3-pin SOT-323 surface mount package, this MOSFET suits applications requiring space-saving and high efficiency such as motor control, power management, and backlighting systems. It operates reliably within a broad temperature range of -55°C to 150°C, ensuring durability in demanding industrial and automotive environments. Compliance with AEC-Q101 automotive standards confirms suitability for automotive electronic systems.

The device features a typical gate charge of 3.5 nC at a gate-source voltage of 3.5 V, supporting fast switching speeds while maintaining low input capacitance. Maximum gate-source voltage is 12 V, and forward voltage is -1.1 V, which enhances conduction control and efficiency.

This MOSFET is a lead-free, halogen-free, and antimony-free 'green' component, aligning with modern environmental standards. It is manufactured in China and designed to provide superior switching performance with minimal leakage currents.

Low on-resistance for high efficiency power management. Fast switching speed due to low input capacitance. Compact SOT-323 package for space-efficient surface mounting. Wide operating temperature range from -55°C to 150°C.

Compliance with automotive standard AEC-Q101. Lead-free and environmentally friendly construction. Suitable for motor control, power management, and backlighting applications.

This high-quality component is ideal for industrial, automotive, and consumer electronic applications requiring reliable and efficient power control. Explore similar products in the MOSFET category at EnvMart for comprehensive semiconductor solutions.

DiodesZetex P-Channel MOSFET 2.5 A 20 V Enhancement 3-Pin SOT-323 DMP2165UW
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.5 A.

This MOSFET has a maximum drain-source voltage of 20 V.

It comes in a compact 3-pin SOT-323 surface mount package.

The operating temperature range is from -55°C to 150°C.

The typical gate charge at a gate-source voltage of 3.5 V is 3.5 nC.

It supports a maximum power dissipation of 700 mW.

The forward voltage for this model is -1.1 V.

It complies with the AEC-Q101 automotive standard.

The maximum gate-source voltage is 12 V.

The maximum drain-source resistance is 180 mΩ, which allows for low power losses.

This model features a P-channel enhancement mode.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

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