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Vishay Switching Diode 1200 V 8 A Surface Mount TO-252 Package 3-Pin DPAK VS-8EWF12STR-M3
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 2.39mm |
| Brand | Vishay |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | VS-8EWF12STR-M3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | VS-8 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 8A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 100μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 270ns |
Key Features
- Supports a high peak reverse repetitive voltage of 1200 V.
- Maximum continuous forward current is rated at 8 amperes.
- Fast recovery switching diode with peak reverse recovery time of 270 nanoseconds.
- Compact surface mount design with 3-pin DPAK TO-252 package.
- Operating temperature range from -40°C to 150°C ensuring reliability in harsh environments.
- Maximum forward voltage drop of 1.3 volts promotes efficient conduction.
- RoHS compliant and manufactured according to industry standards.
- Designed for fast recovery rectifier applications requiring high efficiency and compact size.
Product Description
Vishay VS-8EWF12STR-M3 is a high-performance switching diode designed for industrial and electronic applications requiring reliable fast recovery and high voltage blocking capabilities. This diode has a peak reverse repetitive voltage of 1200 V and a maximum continuous forward current capacity of 8 A, making it suitable for power rectification and switching circuits.
Packaged in a surface mount TO-252 3-pin DPAK format, the diode optimizes PCB space while offering robust thermal management with an operating temperature reaching up to 150°C. It has a fast peak reverse recovery time of 270 ns, which is critical for high-speed switching tasks in power supplies and inverters.
The diode supports a peak non-repetitive forward surge current of 200 A and exhibits a maximum forward voltage of 1.3 V, enhancing electrical efficiency. Its operating temperature range from -40°C to 150°C allows it to function reliably in demanding industrial environments.
The device complies with RoHS standards, ensuring it meets environmental safety norms. Its compact dimensions (6.73 mm length, 6.22 mm width, and 2.39 mm height) enable versatile integration into electronic assemblies.
High peak reverse repetitive voltage of 1200 V ensures protection against voltage spikes. Maximum continuous forward current of 8 A caters to high power applications. Fast recovery time of 270 ns supports efficient switching operations.
Surface mount TO-252 package facilitates compact electronic device design. Wide operating temperature range for dependable performance. Low maximum forward voltage drop reduces power loss. RoHS compliant for environmentally responsible manufacturing.
Manufactured in China with strict quality standards.
This diode is ideal for industrial power rectifiers, fast recovery circuits, and applications in power management and electronics manufacturing. It enhances system efficiency, reduces thermal stress, and supports compact design constraints.
Explore more semiconductor components including Schottky diodes and rectifiers in our comprehensive electronics category at EnvMart.
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Frequently Asked Questions
The peak reverse repetitive voltage of this model is 1200 V, providing protection against voltage spikes in various applications.
The maximum continuous forward current for the VS-8EWF12STR-M3 is rated at 8 A, making it suitable for high power applications.
This model features a fast peak reverse recovery time of 270 nanoseconds, which is essential for high-speed switching tasks.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The operating temperature range for this diode is from -40°C to 150°C, ensuring reliable performance in harsh environments.
Yes, this diode is RoHS compliant, ensuring it meets environmental safety standards.
The maximum forward voltage drop for the VS-8EWF12STR-M3 is 1.3 V, promoting efficient conduction during operation.
This model is a switching diode, designed for fast recovery applications and high voltage blocking capabilities.
The peak non-repetitive forward surge current for the VS-8EWF12STR-M3 is 200 A, which is critical for handling surge conditions.
The TO-252 package of this diode has 3 pins, facilitating its integration into electronic assemblies.
The peak reverse current for the VS-8EWF12STR-M3 is rated at 100 μA, ensuring it operates effectively under reverse voltage conditions.
This diode is manufactured in China, adhering to strict quality standards.
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