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onsemi N-Channel MOSFET 100 V 128 A Enhancement Mode 3-Pin TO-220 FDPF4D5N10C

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 16.07mm
Length 10.36mm
Model FDPF4D5N10C
Width 4.9mm
Mount Type Through Hole
Series FDPF
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 128A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 4.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 37.5W
Typical Gate Charge Qg @ Vgs 48nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET utilizes advanced PowerTrench® process with Shielded Gate technology for optimized on-state resistance and switching performance.
  • Maximum drain-source resistance (Rds) is 4.5 milliohms at VGS = 10 V and ID = 128 A.
  • Equipped with low typical gate charge (Qg) of 48 nC ensuring reduced switching losses.
  • Capable of maximum power dissipation of 37.5 W with an operating temperature range from -55°C to 175°C.
  • Designed for through-hole mounting with a standard 3-pin TO-220 package.
  • Typical forward voltage (Vf) is 1.3 V supporting efficient conduction.
  • Device includes an internal low voltage spike snubber function for enhanced reliability.
  • Suitable for synchronous rectification and applications such as ATX servers, motor drives, telecom, industrial power supplies, and solar inverters.

Product Description

onsemi FDPF4D5N10C is an N-Channel MOSFET packaged in a 3-pin TO-220 form factor, featuring a maximum continuous drain current of 128 A and a drain-source voltage rating of 100 V. This device is manufactured using ON Semiconductor's advanced PowerTrench® process integrating Shielded Gate technology to minimize on-state resistance and maintain exceptional switching performance.

The MOSFET exhibits a low Rds(on) value of 4.5 milliohms at a gate-source voltage of 10 V, supporting high efficiency in power switching applications. Its typical gate charge of 48 nC aids in reducing switching losses, contributing to overall power efficiency.

Designed to handle up to 37.5 W power dissipation, it operates safely within a wide temperature range from -55°C up to 175°C. The device supports standard through-hole mounting, facilitating ease of integration in various industrial applications.

Notable features include a soft body diode with extremely low reverse recovery charge, an internal snubber function to limit voltage spikes, and low forward voltage of 1.3 V that enhances conduction efficiency. These characteristics result in high power density and reliable operation.

This MOSFET is ideal for use in synchronous rectification, such as ATX power supplies, server/workstation power systems, telecom equipment, motor drives, uninterruptible power supplies, and solar power inverters. Its performance and rugged design make it suitable for diverse industrial, commercial, and computing environments.

This MOSFET utilizes advanced PowerTrench® process with Shielded Gate technology for optimized on-state resistance and switching performance. Maximum drain-source resistance (Rds) is 4.5 milliohms at VGS = 10 V and ID = 128 A.

Equipped with low typical gate charge (Qg) of 48 nC ensuring reduced switching losses. Capable of maximum power dissipation of 37.5 W with an operating temperature range from -55°C to 175°C. Designed for through-hole mounting with a standard 3-pin TO-220 package.

Typical forward voltage (Vf) is 1.3 V supporting efficient conduction. Device includes an internal low voltage spike snubber function for enhanced reliability. Suitable for synchronous rectification and applications such as ATX servers, motor drives, telecom, industrial power supplies, and solar inverters.

Explore the full range of MOSFETs at EnvMart to find components optimized for your power electronics needs.

onsemi N-Channel MOSFET 100 V 128 A Enhancement Mode 3-Pin TO-220 FDPF4D5N10C
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Frequently Asked Questions

The maximum continuous drain current for this model is 128 A.

This MOSFET has a maximum drain-source voltage rating of 100 V.

The maximum drain-source resistance (Rds) is 4.5 milliohms at VGS = 10 V and ID = 128 A.

The typical gate charge (Qg) is 48 nC, which helps in reducing switching losses.

It is capable of a maximum power dissipation of 37.5 W.

The operating temperature range is from -55°C to 175°C.

This model is designed for through-hole mounting with a standard 3-pin TO-220 package.

The typical forward voltage (Vf) is 1.3 V, which supports efficient conduction.

It includes an internal low voltage spike snubber function to enhance reliability.

The dimensions are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.

This model is an N-channel MOSFET with enhancement mode operation.

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