onsemi FDPF4D5N10C is an N-Channel MOSFET packaged in a 3-pin TO-220 form factor, featuring a maximum continuous drain current of 128 A and a drain-source voltage rating of 100 V. This device is manufactured using ON Semiconductor's advanced PowerTrench® process integrating Shielded Gate technology to minimize on-state resistance and maintain exceptional switching performance.
The MOSFET exhibits a low Rds(on) value of 4.5 milliohms at a gate-source voltage of 10 V, supporting high efficiency in power switching applications. Its typical gate charge of 48 nC aids in reducing switching losses, contributing to overall power efficiency.
Designed to handle up to 37.5 W power dissipation, it operates safely within a wide temperature range from -55°C up to 175°C. The device supports standard through-hole mounting, facilitating ease of integration in various industrial applications.
Notable features include a soft body diode with extremely low reverse recovery charge, an internal snubber function to limit voltage spikes, and low forward voltage of 1.3 V that enhances conduction efficiency. These characteristics result in high power density and reliable operation.
This MOSFET is ideal for use in synchronous rectification, such as ATX power supplies, server/workstation power systems, telecom equipment, motor drives, uninterruptible power supplies, and solar power inverters. Its performance and rugged design make it suitable for diverse industrial, commercial, and computing environments.
This MOSFET utilizes advanced PowerTrench® process with Shielded Gate technology for optimized on-state resistance and switching performance. Maximum drain-source resistance (Rds) is 4.5 milliohms at VGS = 10 V and ID = 128 A.
Equipped with low typical gate charge (Qg) of 48 nC ensuring reduced switching losses. Capable of maximum power dissipation of 37.5 W with an operating temperature range from -55°C to 175°C. Designed for through-hole mounting with a standard 3-pin TO-220 package.
Typical forward voltage (Vf) is 1.3 V supporting efficient conduction. Device includes an internal low voltage spike snubber function for enhanced reliability. Suitable for synchronous rectification and applications such as ATX servers, motor drives, telecom, industrial power supplies, and solar inverters.
Explore the full range of MOSFETs at EnvMart to find components optimized for your power electronics needs.
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent