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Nexperia Dual NPN and PNP Bipolar Transistor 100 mA, 65 V, 6-Pin SOT-363 BC846BPN,115

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Nexperia Dual NPN and PNP Bipolar Transistor 100 mA, 65 V, 6-Pin SOT-363 BC846BPN,115

Name: Nexperia Dual NPN and PNP Bipolar Transistor 100 mA, 65 V, 6-Pin SOT-363 BC846BPN,115
Brand: Nexperia
SKU: 106294
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	2.2mm
Model	BC846BPN,115
Width	2.2mm
Mount Type	Surface
Series	BC846BPN
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	6
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN + PNP
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Isolated
Maximum Transition Frequency ft	100MHz

Key Features

Designed for both NPN and PNP transistor configurations.
Maximum collector current of 100 mA enables moderate current handling.
Maximum collector-emitter voltage rating of 65 V ensures robust switching capabilities.
Compact SOT-363 package with 6 pins allows for surface mounting and space-saving PCB design.
RoHS compliant and meets automotive AEC-Q101 standard for reliability.
Wide operating temperature range from -55°C to 150°C for diverse applications.
Minimum DC current gain (hFE) of 200 ensures efficient amplification.
Maximum power dissipation of 300 mW supports stable operation in low power circuits.

Product Description

Nexperia BC846BPN,115 is a dual NPN and PNP bipolar transistor designed for electronic applications requiring small signal amplification and switching. The transistor features a maximum collector current of 100 mA and collector-emitter voltage of 65 V, suitable for low power electronic circuits.

The device is housed in a 6-pin SOT-363 surface mount package, enabling compact PCB layouts and efficient heat dissipation. This transistor operates with a minimum DC current gain (hFE) of 200, making it ideal for amplification in communication and control circuits.

With a maximum operating temperature of 150°C and a minimum operating temperature of -55°C, the BC846BPN,115 transistor is suitable for use in automotive and industrial environments. Its compliance with the AEC-Q101 standard highlights its reliability for automotive applications.

The transistor supports a maximum power dissipation of 300 mW and a transition frequency of 100 MHz, making it suitable for high-frequency signal processing and switching tasks. The device offers isolated transistor configuration ensuring electrical isolation in sensitive circuits.

Designed for dual NPN and PNP transistor operation. Maximum DC collector current of 100 mA. Maximum collector-emitter voltage of 65 V. Surface mount 6-pin SOT-363 package. Minimum DC current gain of 200. Maximum operating temperature of 150°C.

RoHS compliant and meets AEC-Q101 automotive standard. Supports high-frequency switching up to 100 MHz. Maximum power dissipation of 300 mW. Isolated transistor configuration.

This transistor is commonly used in automotive electronics, industrial control systems, consumer electronic devices, and communication equipment requiring reliable small-signal transistors. The compact form factor and robust specifications make it a preferred choice for surface mount technology applications.

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