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Infineon HEXFET N-Channel MOSFET 1.2 A 30 V Enhancement Mode 3-Pin SOT-23 IRLML2803TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML2803TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 540mW |
| Typical Gate Charge Qg @ Vgs | 3.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| SMT N channel MOSFET,IRLML2803 0.91A 30VBrand | International Rectifier |
Key Features
- Supports a maximum continuous drain current of 1.2 A for reliable electrical performance.
- Maximum drain-source voltage of 30 V ensures wide application compatibility.
- Low maximum drain-source resistance of 250 mΩ minimizes power dissipation.
- Enhancement mode operation enables efficient switching with low gate charge.
- Compact 3-pin SOT-23 surface mount package ideal for space-constrained designs.
- High maximum power dissipation of 540 mW allows sustained performance.
- Operates reliably at temperatures ranging from -55°C to +150°C.
- Typical gate charge of 3.3 nC at Vgs optimizes dynamic switching efficiency.
Product Description
Infineon IRLML2803TRPBF is a HEXFET N-Channel MOSFET designed for reliable enhancement mode switching applications. It delivers a maximum continuous drain current of 1.2 A and supports a maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SOT-23 surface mount, this MOSFET offers efficient performance with a low maximum drain-source resistance of 250 mΩ, minimizing power losses in electronic circuits.
Its typical gate charge of 3.3 nC at gate voltage ensures fast switching with low gate drive power. The device sustains a power dissipation of up to 540 mW while maintaining operational stability over a wide temperature range of -55°C to +150°C. Compliance with AEC-Q101 automotive standards indicates its suitability for automotive and industrial applications requiring high reliability and endurance.
This MOSFET is widely used in DC-DC converters, motor control circuits, power supply switching, and automation systems, where efficient energy management and compact surface mount form factor are critical. Its optimal gate voltage of +10 V enables effective switching performance, and it can handle pulsed drain currents exceeding continuous ratings for transient conditions.
Installation requires proper thermal management and adherence to maximum voltage and current specifications to ensure longevity and functional safety. The SOT-23 package facilitates integration into space-sensitive PCB layouts, supporting modern electronic design demands.
Supports continuous drain current of 1.2 A ensuring stable operation under load. Maximum drain-source voltage rating of 30 V for versatile applications. Low on-resistance of 250 mΩ reduces losses and heat generation. Enhancement mode operation allows high efficiency and reliable switching.
Surface mount 3-pin SOT-23 package suitable for compact circuits. Robust power handling capacity of 540 mW for persistent use. Wide operating temperature range from -55°C to +150°C for durability. Typical gate charge of 3.3 nC enables rapid switching response.
AEC-Q101 certified for automotive-grade reliability.
This product is ideal for industrial, automotive, consumer electronics, and automation applications, providing efficient power management in constrained spaces. Explore more semiconductor and MOSFET solutions in EnvMart for your technical needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.2 A, ensuring stable operation under load.
This MOSFET supports a maximum drain-source voltage of 30 V, making it suitable for versatile applications.
The typical gate charge at Vgs is 3.3 nC, which optimizes dynamic switching efficiency.
The SOT-23 package has dimensions of 3.04 mm in length, 1.4 mm in width, and a height of 1.02 mm.
It has a maximum power dissipation of 540 mW, allowing for sustained performance in applications.
This MOSFET operates reliably within a temperature range of -55°C to +150°C.
It uses a surface mount type, specifically in a compact 3-pin SOT-23 configuration.
This model complies with the AEC-Q101 automotive standard, indicating its suitability for automotive applications.
The maximum drain-source resistance is 250 mΩ, which helps minimize power dissipation.
It is widely used in DC-DC converters, motor control circuits, power supply switching, and automation systems.
This model features an N-channel type, which is typical for enhancement mode operation.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V, ensuring compatibility with various gate drive circuits.
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