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Infineon HEXFET N-Channel MOSFET 1.2A 20V Enhancement Mode 3-Pin SOT-23 IRLML2402TRPBF

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Infineon HEXFET N-Channel MOSFET 1.2A 20V Enhancement Mode 3-Pin SOT-23 IRLML2402TRPBF

Name: Infineon HEXFET N-Channel MOSFET 1.2A 20V Enhancement Mode 3-Pin SOT-23 IRLML2402TRPBF
Brand: Infineon
SKU: 153786
Price: 0.17 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.02mm
Length	3.04mm
Model	IRLML2402TRPBF
Width	1.4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	1.2A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	250mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	540mW
Typical Gate Charge Qg @ Vgs	2.6nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	1.2V
ER - Transistor, MOSFET, N ChBrand	International Rectifier
Mosfet,N,chan,SMT,IRLML2402Brand	International Rectifier

Key Features

Provides low resistance conduction with a maximum Rds(on) of 250mΩ.
Supports a maximum power dissipation of 540mW for efficient operation.
Features enhancement mode channel operation for reliable switching.
Operates safely from -55°C up to 150°C ambient temperature.
Compact SOT-23 surface-mount package with 3 pins for space-saving PCB layouts.
Typical gate charge is 2.6nC at Vgs, enabling fast switching.
Maximum gate-source voltage tolerance of ±12V protects device integrity.
Forward voltage drop of 1.2V ensures minimal conduction losses.

Product Description

Infineon IRLML2402TRPBF is a HEXFET N-Channel MOSFET designed for efficient power switching in electronic circuits. It offers a continuous drain current of 1.2A and a maximum drain-source voltage of 20V, packaged in a compact 3-pin SOT-23 surface-mount form factor suitable for dense PCB designs.

This device features enhancement mode channel operation and a low maximum drain-source resistance (Rds) of 250 milliohms, which ensures low conduction losses and improved energy efficiency in applications. The MOSFET supports a maximum power dissipation of 540mW allowing it to operate effectively under moderate load conditions.

The typical gate charge of 2.6nC and gate-source voltage limits of -12V to +12V facilitate reliable and fast switching while protecting the gate from voltage spikes. With a forward voltage drop of 1.2V, it reduces power dissipation during conduction periods.

Its operating temperature range extends from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics environments with demanding thermal conditions. The medium footprint and surface-mount package type help conserve PCB space and reduce assembly cost.

Typical use cases include switching in power management circuits, load switching, and signal amplification in communication, automotive electronics, and consumer device applications.

Provides low resistance conduction with maximum 250mΩ Rds(on). Maximum power dissipation capability of 540mW. Enhancement mode N-channel MOSFET for efficient switching. Wide operating temperature range from -55°C to 150°C.

Compact 3-pin SOT-23 surface-mount package. Typical gate charge of 2.6nC for fast response switching. Gate-source voltage tolerance of ±12V for reliable operation. Forward voltage drop of 1.2V minimizes energy loss. Explore Infineon MOSFETs and other semiconductor products for your next project at EnvMart.