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Vishay SIS N-Channel Power MOSFET, 58.1 A Drain Current, 80 V Drain-Source Voltage, 8-Pin PowerPAK 1212-8S SiSS588DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 3.3mm |
| Model | SiSS588DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SIS |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8S |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 58.1A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 0.008Ω |
| Maximum Power Dissipation Pd | 56.8W |
| Typical Gate Charge Qg @ Vgs | 14.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Supports a maximum continuous drain current of 58.1 amperes.
- Maximum drain-source voltage rated at 80 volts ensuring robust operation.
- Low drain-source resistance of 0.008 ohms minimizes conduction losses.
- PowerPAK 1212-8S surface mount package with 8 pins for compact and efficient PCB layout.
- Maximum power dissipation of 56.8 watts allows for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C suits varied industrial environments.
- Typical gate charge of 14.2 nanocoulombs enables fast switching applications.
- Maximum gate-source voltage of ±20 volts protects gate from overvoltage conditions.
Product Description
Vishay SiSS588DN-T1-GE3 is a high-performance N-Channel power MOSFET designed for demanding industrial and commercial electronic applications. Featuring a maximum continuous drain current of 58.1 A and a maximum drain-source voltage of 80 V, this MOSFET is housed in a compact 8-pin PowerPAK 1212-8S surface mount package measuring 3.3 mm by 3.3 mm. Its exceptionally low on-resistance of 0.008 ohms enables high efficiency in power management circuits.
With a maximum power dissipation of 56.8 W and an operating temperature range from -55°C up to 150°C, it performs reliably under harsh thermal conditions. The device features a typical gate charge of 14.2 nC and withstands a maximum gate-source voltage of ±20 V, enhancing switching performance and gate protection.
Engineered for applications such as synchronous rectification, primary side switching, DC/DC converters, OR-ing and hot-swap switches, power supplies, motor drive control, and battery management, this MOSFET meets RoHS compliance standards. Every unit is rigorously tested for gate resistance and unclamped inductive switching (UIS) to ensure long-term reliability.
Maximum continuous drain current of 58.1 A. Drain-source voltage rated at 80 V for robust performance. Low on-resistance of 0.008 Ω reduces power losses. Compact PowerPAK 1212-8S 8-pin surface mount package. Power dissipation capability of 56.8 W suits high power applications.
Wide temperature operation from -55°C to 150°C. Typical gate charge of 14.2 nC enables efficient switching. Maximum gate-source voltage ±20 V protects the gate terminal. Compliant with RoHS standards ensuring environmental safety.
The SiSS588DN-T1-GE3 MOSFET is suitable for industrial, laboratory, automotive, and manufacturing environments where efficient power control and switching are critical. It offers designers a reliable solution for enhancing energy efficiency and performance in electronic systems.
Explore the Vishay product range on EnvMart for a comprehensive selection of semiconductor and discrete components designed for cutting-edge power management solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 58.1 amperes.
This MOSFET has a maximum drain-source voltage rated at 80 volts.
It features a low drain-source resistance of 0.008 ohms, minimizing conduction losses.
The SiSS588DN-T1-GE3 is housed in a PowerPAK 1212-8S surface mount package with 8 pins.
It has a maximum power dissipation of 56.8 watts, suitable for high power applications.
The operating temperature range is from -55°C to 150°C, making it suitable for varied industrial environments.
The typical gate charge is 14.2 nanocoulombs, enabling efficient switching.
It can withstand a maximum gate-source voltage of ±20 volts, protecting the gate from overvoltage conditions.
The dimensions of the package are 3.3 mm by 3.3 mm.
Yes, the SiSS588DN-T1-GE3 meets RoHS compliance standards, ensuring environmental safety.
It is designed for applications such as synchronous rectification, DC/DC converters, power supplies, and motor drive control.
The country of origin for this MOSFET is India.
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