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onsemi N-Channel MOSFET 83 A 40 V Enhancement Mode 4-Pin TO-252 Package NVD5C454NT4G
Specifications
| Country of Origin | Vietnam |
|---|---|
| Brand | onsemi |
| Height | 2.25mm |
| Length | 6.73mm |
| Model | NVD5C454NT4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 83A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 56W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
| onsemi N-Channel MOSFET, 83 A, 40 V Enhancement, 4-Pin TO-252 NVD5C454NT4GBrand | onsemi |
Key Features
- Offers low on-resistance of 4.2 milliohms for efficient conduction.
- Supports a maximum power dissipation of 56 W for robust operation.
- Operates within a wide temperature range from -55°C up to 175°C.
- Designed for automotive applications compliant with AEC-Q101 standards.
- Compact TO-252 surface-mount package measuring 6.73 mm length, 6.22 mm width, and 2.25 mm height.
- Has a maximum gate-source voltage rating of 20 V with typical gate charge of 32 nC.
- Features a forward voltage of 1.2 V typical, ensuring minimal voltage drop.
- Manufactured in Vietnam with high thermal performance suitable for powertrain and motor drive uses.
Product Description
onsemi NVD5C454NT4G is a high-performance N-Channel MOSFET engineered for automotive and industrial power applications. It features an enhancement mode channel with a maximum continuous drain current of 83 A and a maximum drain-source voltage of 40 V, ensuring robust load handling and voltage control.
This device is housed in a compact 4-pin TO-252 (DPAK) package designed for surface mounting, offering high thermal dissipation and a durable footprint for space-constrained PCB layouts. Its low on-resistance of 4.2 milliohms minimizes conduction losses, improving efficiency in power switching circuits.
The MOSFET supports a maximum power dissipation of 56 W, making it suitable for demanding automotive uses such as low and high side drivers, HVAC motor control, ABS pressure pumps, and general powertrain applications. It complies with the AEC-Q101 automotive standard, ensuring reliability under harsh environmental conditions.
Operating temperature ranges from -55°C to 175°C and a maximum gate-source voltage of 20 V enable use in a wide variety of automotive and industrial environments. The typical gate charge of 32 nC allows for fast switching performance, vital for efficient motor drives and power management systems.
Key technical dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.25 mm, facilitating integration into compact designs. The MOSFET's forward voltage is typically 1.2 V, further reducing power losses during operation.
Manufactured in Vietnam, the onsemi NVD5C454NT4G offers a reliable and high-quality solution for semiconductor applications requiring a durable and efficient MOSFET device. Offers low on-resistance of 4.2 milliohms for efficient conduction.
Supports a maximum power dissipation of 56 W for robust operation. Operates within a wide temperature range from -55°C up to 175°C. Designed for automotive applications compliant with AEC-Q101 standards. Compact TO-252 surface-mount package measuring 6.73 mm length, 6.22 mm width, and 2.25 mm height.
Has a maximum gate-source voltage rating of 20 V with typical gate charge of 32 nC. Features a forward voltage of 1.2 V typical, ensuring minimal voltage drop. Manufactured in Vietnam with high thermal performance suitable for powertrain and motor drive uses.
Explore EnvMart’s broad selection of automotive-grade semiconductors and power MOSFETs for innovative industrial and automotive system designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 83 A, making it suitable for robust load handling in power applications.
It has a maximum drain-source voltage rating of 40 V, allowing for effective voltage control in various applications.
This MOSFET supports a maximum power dissipation of 56 W, ensuring reliable operation under demanding conditions.
The on-resistance is 4.2 milliohms, which helps minimize conduction losses and improve efficiency in power switching circuits.
The TO-252 package measures 6.73 mm in length, 6.22 mm in width, and 2.25 mm in height, facilitating compact integration into PCB designs.
It operates within a wide temperature range from -55°C to 175°C, suitable for various automotive and industrial environments.
The typical gate charge is 32 nC, enabling fast switching performance essential for efficient motor drives and power management systems.
This model is designed to comply with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The maximum gate-source voltage rating is 20 V, which is important for controlling the MOSFET operation effectively.
The forward voltage is typically 1.2 V, which helps to reduce power losses during operation.
This unit is manufactured in Vietnam, ensuring a reliable solution for semiconductor applications.
It features an enhancement mode N-channel, which is commonly used in power applications for improved efficiency.
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