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IXYS N-Channel IGBT, 50 A 1700 V, 250 W TO-247AD Package, Through Hole Surface Mount IXGH24N170
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 19.1mm |
| Length | 20.32mm |
| Model | IXGH24N170 |
| Width | 16.26mm |
| Mount Type | Through Hole, Surface |
| Series | IXGH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AD |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94 V-0 |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 1700V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 250W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
| IXYS IXGH16N170, N-Channel IGBT, 32 A 1700 V, 3-Pin TO-247AD, Through HoleBrand | IXYS |
Key Features
- This IGBT features a TO-247AD package designed for through hole and surface mounting applications.
- It operates efficiently at a maximum operating temperature of 150°C.
- The device has a maximum collector-emitter saturation voltage of 3.3 V to minimize conduction losses.
- Designed with a 3-pin configuration and an N-channel type for enhanced switching performance.
- Capable of switching at high speeds with a typical switching speed of 290 ns.
- Supports a maximum gate-emitter voltage of ±20 V for reliable gate control.
- Maintains stable operation down to a minimum temperature of -55°C for versatile environmental use.
- Compact dimensions with a length of 20.32 mm, width of 16.26 mm, and height of 19.1 mm ensure easy PCB integration.
Product Description
The IXYS IXGH24N170 is a robust N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high current and high voltage power electronics applications. Rated at a maximum continuous collector current of 50 A and withstanding voltages up to 1700 V, this device offers excellent performance in demanding industrial and commercial environments.
Housed in a TO-247AD package, the transistor is intended for through hole and surface mounting, enabling straightforward installation on power PCBs. The three-pin design allows for efficient and reliable gate control circuitry integration.
With a maximum power dissipation of 250 W and a maximum operating temperature of 150°C, the IXGH24N170 supports high power and temperature demanding scenarios while maintaining stability. The device also features a maximum collector-emitter saturation voltage of 3.3 V to reduce conduction losses, enhancing overall efficiency.
This IGBT supports a maximum gate-emitter voltage of ±20 V for consistent switching performance and protection against voltage spikes. The device exhibits a fast switching speed of approximately 290 ns, making it suitable for switching power supplies, motor drives, and industrial power control.
Its environmental operating range extends as low as -55°C, ensuring reliable performance in various climates and conditions. The compact dimensions (20.32 mm length × 16.26 mm width × 19.1 mm height) allow fitting into tight circuit layouts.
Certified to the UL 94 V-0 standard, the IXGH24N170 provides enhanced electrical safety and flame retardance.
This N-Channel IGBT is extensively used in applications including industrial motor control, power inverters, switched mode power supplies, and energy management systems where fast, efficient, and reliable switching is critical.
IXYS products are widely recognized for their quality and reliability, and the IXGH24N170 model continues the tradition by combining the simple gate-drive of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor.
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Frequently Asked Questions
The IXGH24N170 has a maximum continuous collector current rating of 50 A.
It can withstand a maximum collector-emitter voltage of 1700 V.
The maximum power dissipation for this IGBT is 250 W.
The dimensions of the IXGH24N170 are 20.32 mm in length, 16.26 mm in width, and 19.1 mm in height.
The maximum operating temperature for the IXGH24N170 is 150°C.
This IGBT maintains stable operation down to a minimum temperature of -55°C.
The IXGH24N170 supports a maximum gate-emitter voltage of ±20 V.
It has a maximum collector-emitter saturation voltage of 3.3 V.
This model supports both through hole and surface mounting.
The IXGH24N170 has a typical switching speed of approximately 290 ns.
The IXGH24N170 is certified to the UL 94 V-0 standard for enhanced electrical safety and flame retardance.
This IGBT is suitable for applications such as industrial motor control, power inverters, and switched mode power supplies.
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