IXYS HiperFET Polar N-Channel MOSFET 120 A 150 V Enhancement 3-Pin TO-247 IXFH120N15P

IXYS IXFH120N15P Power MOSFET is an N-channel device from the HiperFET Polar series designed for high current and voltage applications. Featuring a maximum continuous drain current of 120 A and a drain-source voltage of 150 V, this enhancement-mode MOSFET offers efficient switching with low resistance and high power dissipation, making it suitable for industrial and power electronics systems.

Its TO-247 3-pin package is optimized for through-hole mounting, providing mechanical stability and ease of integration in PCB assemblies. The device operates reliably over a broad temperature range from -55°C to 175°C, making it well-suited for demanding environments such as automotive electronics, industrial motor drives, and power supplies.

Key technical attributes include a low maximum Rds(on) of 16 mΩ, resulting in minimized conduction losses and improved efficiency, and a typical gate charge of 150 nC for fast switching capabilities. The maximum gate-source voltage rating of ±20 V allows robust gate control without damage risk.

The inclusion of a fast intrinsic diode in the HiperFET Polar series enhances switching performance and reliability, supporting applications involving PWM motor control, power inverters, and other power management functions.

This MOSFET is ideal for use in power control, switching regulators, and other power conversion electronics requiring high current capacity, low on-resistance, and durable performance over extended temperature ranges.

Maximum continuous drain current of 120 A ensures high current handling capabilities. Maximum drain-source voltage rated at 150 V for robust operation. TO-247 package with 3 pins provides reliable through-hole mounting. Low maximum drain-source resistance of 16 mΩ reduces power loss and heat generation.

High maximum power dissipation of 600 W supports demanding power applications. Wide operating temperature range from -55°C to 175°C enables use in harsh environments. Maximum gate-source voltage of ±20 V ensures stable gate control.

Enhancement-mode channel operation for efficient switching performance. Compact dimensions of 21.46 mm height, 16.26 mm length, and 5.3 mm width fit various circuits. Integrated fast intrinsic diode enhances switching speed and reliability.

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