IXYS HiperFET Polar N-Channel MOSFET 86A 300V Enhancement Mode 4-Pin SOT-227 IXFN102N30P

IXYS IXFN102N30P is an advanced N-channel Power MOSFET from the HiperFET Polar series designed for high-performance power switching applications. This device supports a maximum continuous drain current of 86 amperes and a drain-source voltage rating of 300 volts, housed in a sturdy 4-pin SOT-227 panel mount package.

With an enhancement channel mode, it offers efficient and reliable switching suitable for industrial and commercial electronic circuits. The device exhibits low on-resistance (33mΩ), contributing to reduced power losses and improved energy efficiency. The fast intrinsic body diode characteristic ensures excellent performance in applications requiring fast recovery times.

The maximum power dissipation of 570 watts allows this MOSFET to operate effectively in high power environments, while the typical gate charge of 224nC facilitates fast switching with reduced energy consumption. The device is rated for maximum operating temperatures up to 150°C and can perform over a wide temperature range from -55°C, ensuring robust reliability under harsh conditions.

Key physical dimensions include length of 38.23mm, width of 25.42mm, and height of 9.6mm, enabling easy integration into panel-mounted power electronics systems. Although it lacks specific industry certification or automotive approval, its robust design and electrical parameters make it well suited for power management, industrial automation, motor control, and power supply applications.

Built with HiperFET Polar technology for enhanced performance. Features an enhancement mode channel for efficient switching. Maximum power dissipation of 570W supports high power applications. Typical gate charge is 224nC at Vgs, optimizing switching speeds.

Operates reliably at temperatures ranging from -55°C to 150°C. Low maximum drain-source resistance of 33mΩ reduces conduction losses. Fast intrinsic body diode supports high frequency operation. Panel mount type package ensures robust installation.

Dimensions: Length 38.23mm, Width 25.42mm, Height 9.6mm.

This IXYS MOSFET is ideal for designers and engineers working in power electronics across industrial, automotive, HVAC, and manufacturing sectors. It offers a reliable and efficient solution for high current and voltage requirements, suitable for insertion into machinery and electronic systems to enhance production efficiency.

For more components like these, browse the Semiconductor and Power MOSFET category at EnvMart.