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Infineon Isolated OptiMOS 2 Type P and N-Channel MOSFET, 1.5A, 20V, Enhancement Mode, 6-Pin TSOP Package BSL215CH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSL215CH6327XTSA1 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 3nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Features low typical gate charge of 3 nC for fast switching performance.
- Supports maximum continuous drain current of 1.5A for moderate-load circuits.
- Has a maximum drain-source voltage rating of 20 V suitable for low-voltage systems.
- Construction includes isolated complementary transistor elements for flexible circuit design.
- Supplied in a compact 6-pin TSOP surface mount package with small footprint.
- Offers low drain-source resistance of 280 mΩ to minimize conduction losses.
- Designed for enhancement mode operation with a power dissipation of 500 mW.
- Qualified to automotive AEC-Q101 standard for elevated stress tolerance.
Product Description
Infineon BSL215CH6327XTSA1 is an Isolated OptiMOS 2 MOSFET comprising Type P and Type N channel transistor elements optimized for automotive and industrial electronics requiring reliable switching and amplification.
This device supports a maximum continuous drain current of 1.5 amperes and can withstand up to 20 volts drain-source voltage. It features low gate charge of 3 nC enabling fast switching speed and a low drain-source resistance of 280 milliohms to reduce conduction losses, making it efficient for power management tasks.
The MOSFET is housed in a compact TSOP package with 6 pins, facilitating surface mounting on printed circuit boards where space constraints and high reliability are priorities. The transistor configuration is isolated, containing two elements per chip to enable complementary circuit operations including switch control.
Rated for operation between -55 °C and 150 °C, it meets the automotive standard AEC-Q101 for stress tolerance, assuring durability in harsh environments. The maximum power dissipation is 500 milliwatts, helping manage thermal load in compact designs.
Typical applications include automotive signal switching, battery management modules, power distribution systems, compact DC-DC converters, voltage regulators, infotainment load switching, and embedded motor control driver circuits.
Fast switching with low gate charge of 3 nC. 1.5A continuous drain current for moderate loads. 20 V drain-source voltage rating for low voltage use. Isolated complementary transistor structure. Compact 6-pin TSOP surface mount package.
Low 280 mΩ drain-source resistance to reduce losses. Enhancement mode MOSFET with 500 mW dissipation limit. AEC-Q101 qualified for automotive-grade reliability. Wide operating temperature range: -55 °C to 150 °C. Ideal for automotive and industrial power switching applications.
Explore more electronics components and MOSFET options on EnvMart to meet your industrial and automotive design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5A, making it suitable for moderate-load circuits.
This unit has a maximum drain-source voltage rating of 20V, which is appropriate for low-voltage systems.
It features a low typical gate charge of 3 nC, enabling fast switching performance.
The dimensions of the 6-pin TSOP package are 2.9mm in length, 1.6mm in width, and 1mm in height.
The maximum power dissipation for this MOSFET is 500mW, which helps manage thermal load in compact designs.
It operates within a temperature range of -55 °C to 150 °C, suitable for various environmental conditions.
This model features an isolated complementary transistor configuration, containing two elements per chip for flexible circuit design.
It is qualified to the automotive AEC-Q101 standard, ensuring reliability under elevated stress conditions.
The drain-source resistance is low at 280 mΩ, which helps minimize conduction losses during operation.
Typical applications include automotive signal switching, battery management modules, and compact DC-DC converters.
The maximum gate-source voltage rating for this model is -12V to +12V, allowing for a wide range of control signals.
This model comprises both Type P and Type N channel transistors, optimized for various electronic applications.
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