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Infineon ISP Type P-Channel MOSFET 100 V Maximum Drain Source Voltage 990 mA Continuous Drain Current ISP20EP10LMXTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.7mm |
| Length | 7.3mm |
| Model | ISP20EP10LMXTSA1 |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 990mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.2W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Employs enhancement channel mode for effective switching performance.
- Maximum drain source resistance of 2 ohms ensures reliable conduction.
- Maximum power dissipation of 4.2 W supports efficient heat management.
- Operates within a temperature range of -55°C to 175°C for diverse conditions.
- Features a typical gate charge of 3.5 nC at Vgs, facilitating faster switching.
- The 3-pin SOT-223 surface mount package offers industry-standard footprint.
- Designed specifically for battery management, load switching, and reverse polarity protection applications.
- Robust avalanche ruggedness enhances durability in demanding environments.
Product Description
Infineon ISP20EP10LMXTSA1 is a high-quality P-Channel MOSFET designed for use in electronic and industrial applications requiring a 100 V maximum drain source voltage and a continuous drain current up to 990 mA. This device utilizes enhancement channel mode and comes in a compact 3-pin SOT-223 surface mount package, tailored for seamless integration into battery management systems, load switches, and reverse polarity protection circuits.
This MOSFET features a low maximum drain source resistance of 2 ohms, contributing to efficient conduction and reduced power losses. Its maximum power dissipation of 4.2 watts enables effective thermal management, making it suitable for both low and medium power applications. The device operates reliably over a broad temperature range of -55°C to 175°C, ensuring stable performance in harsh industrial, automotive, and commercial environments.
The typical gate charge of 3.5 nC at gate-source voltage supports fast and responsive switching, beneficial for high-frequency control systems. The forward voltage drop of 1.2 V further enhances operational efficiency by minimizing voltage losses during conduction.
The SOT-223 package provides a standardized footprint facilitating ease of installation on printed circuit boards (PCBs), and its robust design ensures high avalanche ruggedness, protecting the device against voltage spikes and transients.
Industrial applications include battery management, industrial automation, load switching, and protection due to the device’s fast switching capabilities and reliable performance. Its design focuses on reducing overall design complexity in medium and low power systems, interfacing easily with microcontrollers and other control logic devices.
The Infineon ISP20EP10LMXTSA1 MOSFET combines efficiency, robustness, and ease of use, making it a preferred choice for engineers and designers seeking reliable power semiconductor solutions in electronics manufacturing, HVAC controls, and automotive systems.
Browse the extensive MOSFET category on EnvMart to find complementary components and related semiconductor devices from Infineon and other leading manufacturers. Employs enhancement channel mode for effective switching performance.
Maximum drain source resistance of 2 ohms ensures reliable conduction. Maximum power dissipation of 4.2 W supports efficient heat management. Operates within a wide temperature range from -55°C to 175°C. Typical gate charge of 3.5 nC at Vgs for fast switching.
Compact 3-pin SOT-223 surface mount package for industry-standard footprint. Designed for battery management and load switching applications. Robust avalanche ruggedness for enhanced durability. Forward voltage drop of 1.2 V optimizes power efficiency.
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Frequently Asked Questions
The Infineon ISP20EP10LMXTSA1 has a maximum drain-source voltage of 100 V.
This model supports a continuous drain current of up to 990 mA.
The maximum power dissipation for this MOSFET is 4.2 W, which facilitates effective thermal management.
It operates reliably within a temperature range of -55°C to 175°C.
The typical gate charge at gate-source voltage (Vgs) is 3.5 nC, which supports faster switching.
This model comes in a compact 3-pin SOT-223 surface mount package.
The maximum drain-source resistance is 2 ohms, ensuring reliable conduction.
It is designed specifically for battery management, load switching, and reverse polarity protection applications.
The forward voltage drop is 1.2 V, which optimizes power efficiency during conduction.
The dimensions are 6.7 mm in height, 1.8 mm in width, and 7.3 mm in length.
The maximum gate-source voltage (Vgs) is 20 V.
The country of origin for this product is India.
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