Infineon ISP Type P-Channel MOSFET 1.7 A 60 V Enhancement Mode 3-Pin SOT-223 ISP75DP06LMXTSA1

Infineon ISP75DP06LMXTSA1 is a P-Channel MOSFET featuring a maximum continuous drain current of 1.7 A and a maximum drain-source voltage of 60 V. It utilizes enhancement mode technology and comes in a 3-pin SOT-223 package designed for surface mounting.

This MOSFET delivers low on-resistance of 1.7 milliohms, allowing for efficient conduction and reduced power loss. Its maximum power dissipation rating of 81 W makes it reliable for handling substantial power within compact electronic applications.

The device supports a maximum gate-source voltage of 20 V and typical gate charge of 80 nC at Vgs, facilitating fast switching capabilities. The forward voltage of 1.1 V ensures minimal voltage drop across the device for energy-efficient operation.

Operating temperature range from -55°C up to 175°C ensures durability in industrial, automotive, and thermal stress environments. Compliance with RoHS and AEC-Q101 automotive standards attests to its quality, safety, and environmental compatibility.

Typical applications include power management, switching regulators, automotive circuits, and electronics requiring reliable, efficient MOSFET components in surface mount packages.

Maximum continuous drain current is 1.7 A with low on-resistance of 1.7 milliohms. Package type is SOT-223 suited for surface mounting applications. Designed with enhancement mode channel and supports gate voltage up to 20 V.

Supports high power dissipation of 81 W and fast switching for efficient performance. Operating temperature ranges from -55°C to 175°C ensuring reliability in harsh conditions. Forward voltage drop is low at 1.1 V enabling energy efficiency.

Complies with RoHS and automotive AEC-Q101 standards for quality and safety. Explore additional Infineon semiconductor components on EnvMart for your electronic design needs.

Explore more products in our Power MOSFET category.