Infineon Isolated OptiMOS P Type P-Channel MOSFET, 2 A Continuous Drain Current, 30 V Drain Source BSL308PEH6327XTSA1

Infineon BSL308PEH6327XTSA1 Isolated OptiMOS P Type P-Channel MOSFET is designed for automotive and industrial electronic applications requiring robust and space-efficient switching devices. This enhancement mode transistor provides a continuous drain current of 2 A and a maximum drain-source voltage of 30 V, delivered in a small 6-pin TSOP package with isolated dual-elements on a single chip.

The device features a low typical drain-source resistance of 130 milliohm, which reduces conduction losses and improves efficiency. The typical gate charge is -5 nC at a gate-source voltage of Vgs, supporting rapid switching necessary for dynamic load management in electronic circuits. It supports a maximum power dissipation of 500 mW to maintain stable operation under thermal stress.

Qualified to the automotive AEC-Q101 standard, this MOSFET ensures reliable performance under elevated temperatures, with a specified operating ambient temperature range from -55°C to 150°C. Its isolated transistor configuration allows for paired switching and simplified dual-channel circuit layouts.

The compact TSOP surface-mount package with dimensions of 2.9 mm length, 1.6 mm width, and 1 mm height minimizes board footprint and simplifies routing on high-density circuit boards. This makes it ideal for battery management systems, DC-DC converters, load switching, and polarity protection circuits in automotive and industrial power electronics.

Low on-resistance reduces conduction losses and improves efficiency. Rated for 30 V drain-source voltage enabling 30 V system integration. Continuous drain current capability of 2 A supports moderate load demands. Typical gate charge -5 nC ensures fast switching response.

500 mW power dissipation for reliable thermal handling. Automotive AEC-Q101 qualification ensures durability under stress. Wide operating temperature range (-55°C to 150°C) for harsh environments. Compact 6-pin TSOP package suitable for space-constrained assembly.

This Infineon MOSFET is suitable for high-temperature automotive power switches, compact surface-mount power distribution boards, and industrial electronic systems requiring efficient P-channel transistor solutions. Explore EnvMart's collection of semiconductor and MOSFET products for advanced electronics manufacturing and design.