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Infineon ISP Type P-Channel MOSFET 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 5.35mm
Length 6.1mm
Model ISP14EP15LMXTSA1
Width 1.2mm
Mount Type Surface
Series ISP
Maximum Operating Temperature 175°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1.29A
Maximum Drain Source Voltage Vds 150V
Maximum Drain Source Resistance Rds 1.38Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 5W
Typical Gate Charge Qg @ Vgs 11.6nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Designed for efficient battery management and load switch applications.
  • Features enhancement channel mode for reliable switching.
  • Compact SOT-223 surface mount package with 3 pins.
  • Maximum power dissipation rated at 5 W for robust performance.
  • Supports operating temperature range from -55°C to 175°C.
  • Low gate charge of 11.6 nC for fast switching capabilities.
  • Maximum gate-source voltage of 20 V ensures safe operation.
  • Typical forward voltage of 1.2 V enables efficient conduction.

Product Description

Infineon ISP14EP15LMXTSA1 is a high-quality P-Channel MOSFET designed with a maximum continuous drain current of 1.29 A and a maximum drain-source voltage of 150 V. Packaged in a 3-Pin SOT-223 surface mount case, it offers a compact solution for power switching applications requiring reliability and efficiency.

This device employs enhancement mode channel operation, making it ideal for battery management systems, load switching, and reverse polarity protection in industrial automation and other electronic applications. The fast switching speed is supported by a low typical gate charge of 11.6 nC, which helps reduce switching losses and improve efficiency at low loads.

The MOSFET can safely operate in a temperature range from -55°C up to 175°C and has a maximum power dissipation of 5 W. Its robust avalanche ruggedness enhances durability under high-voltage transient conditions.

The 3-pin SOT-223 package features an industry-standard footprint, facilitating easy integration with microcontroller and automated systems. Its typical forward voltage drop of 1.2 V and maximum gate-source voltage rating of 20 V provide safe and efficient conduction and drive interface.

Designed for battery management and industrial automation applications. Compact SOT-223 package for surface mount mounting and space-saving design. Fast switching and efficient operation due to low gate charge. Wide operating temperature range for diverse environmental conditions.

Enhancement channel mode reduces design complexity in medium and low power circuits. Avalanche ruggedness enhances reliability under transient stress. Supports high quality demanding industrial applications. Reliable and robust performance with stable electrical characteristics.

Standard industry footprint allows easy PCB design and assembly. Reduces system power loss improving overall efficiency.

Infineon MOSFETs like ISP14EP15LMXTSA1 enhance the design of electronic equipment and industrial controls by providing compact, efficient and reliable power switching devices. Explore more semiconductor solutions in the Electronics & Electricals category at EnvMart for your industrial and manufacturing needs.

Infineon ISP Type P-Channel MOSFET 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.29 A.

This MOSFET has a maximum drain-source voltage rating of 150 V.

It can operate within a temperature range of -55°C to 175°C.

The device is packaged in a SOT-223 surface mount case.

The typical gate charge is 11.6 nC, which supports fast switching capabilities.

It has a maximum power dissipation rating of 5 W.

The typical forward voltage drop is 1.2 V.

The SOT-223 package features 3 pins.

This model features a P-Channel type.

It is designed for battery management systems, load switching, and reverse polarity protection in industrial automation.

The maximum gate-source voltage is 20 V, ensuring safe operation.

The dimensions are 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height.

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