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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISP14EP15LMXTSA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | ISP |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.29A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 1.38Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 11.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon ISP14EP15LMXTSA1 is a high-quality P-Channel MOSFET designed with a maximum continuous drain current of 1.29 A and a maximum drain-source voltage of 150 V. Packaged in a 3-Pin SOT-223 surface mount case, it offers a compact solution for power switching applications requiring reliability and efficiency.
This device employs enhancement mode channel operation, making it ideal for battery management systems, load switching, and reverse polarity protection in industrial automation and other electronic applications. The fast switching speed is supported by a low typical gate charge of 11.6 nC, which helps reduce switching losses and improve efficiency at low loads.
The MOSFET can safely operate in a temperature range from -55°C up to 175°C and has a maximum power dissipation of 5 W. Its robust avalanche ruggedness enhances durability under high-voltage transient conditions.
The 3-pin SOT-223 package features an industry-standard footprint, facilitating easy integration with microcontroller and automated systems. Its typical forward voltage drop of 1.2 V and maximum gate-source voltage rating of 20 V provide safe and efficient conduction and drive interface.
Designed for battery management and industrial automation applications. Compact SOT-223 package for surface mount mounting and space-saving design. Fast switching and efficient operation due to low gate charge. Wide operating temperature range for diverse environmental conditions.
Enhancement channel mode reduces design complexity in medium and low power circuits. Avalanche ruggedness enhances reliability under transient stress. Supports high quality demanding industrial applications. Reliable and robust performance with stable electrical characteristics.
Standard industry footprint allows easy PCB design and assembly. Reduces system power loss improving overall efficiency.
Infineon MOSFETs like ISP14EP15LMXTSA1 enhance the design of electronic equipment and industrial controls by providing compact, efficient and reliable power switching devices. Explore more semiconductor solutions in the Electronics & Electricals category at EnvMart for your industrial and manufacturing needs.
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