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Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSL316CH6327XTSA1 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP-6 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 2.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.86V |
| Transistor Configuration | Isolated |
Key Features
- Operates at a maximum continuous drain current of 1.5 A.
- Maximum drain-source voltage rating of 30 V suitable for low-voltage systems.
- Compact 6-pin TSOP-6 surface-mount package ideal for space-constrained designs.
- Enhancement mode transistor configuration for efficient switching.
- Low drain-source resistance of 280 milliohms reduces conduction losses.
- Typical gate charge of 2.4 nC supports fast switching performance.
- Maximum power dissipation is 500 mW to prevent overheating.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
Product Description
Infineon BSL316CH6327XTSA1 Isolated OptiMOS™ 2 MOSFET is a dual-channel Type N and Type P enhancement transistor engineered for low-voltage switching applications in automotive and industrial environments.
The device features a 6-pin TSOP-6 surface-mount package optimized for compact assemblies and efficient layout integration. This MOSFET offers a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 30 V, making it suitable for DC load switching and power management applications.
It exhibits a low drain-source resistance of 280 milliohms, which reduces conduction losses and improves efficiency. The typical gate charge of 2.4 nC ensures fast switching capabilities essential for modern electronic control systems. Power dissipation is rated at 500 mW to prevent thermal issues in compact PCB layouts.
Designed to operate reliably in extreme temperature conditions ranging from -55°C up to 150°C, this device is qualified to the automotive AEC-Q101 standard, ensuring robust performance in harsh automotive modules and control boards.
The isolated transistor configuration includes two separate elements, providing complementary N- and P-channel MOSFETs within one chip, ideal for push-pull driver stages, battery protection circuits, and load disconnect functions in vehicle electronics.
Maximum continuous drain current of 1.5 A. Drain-source voltage rating of 30 V. 6-Pin TSOP-6 surface-mount package for compact design. Low on-resistance at 280 mΩ for efficient conduction. Typical gate charge of 2.4 nC for fast switching times.
Power dissipation rating up to 500 mW. Operating temperature range from -55°C to 150°C. AEC-Q101 automotive standard qualified. Dual isolated N- and P-channel transistor configuration. Enhancement mode for effective switching control.
This MOSFET is suited for applications including automotive DC load switching, complementary driver stages, surface-mount power management, battery protection, and temperature-sensitive module designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.5 A.
This unit has a maximum drain-source voltage rating of 30 V, suitable for low-voltage systems.
It comes in a compact 6-pin TSOP-6 surface-mount package, ideal for space-constrained designs.
The typical gate charge is 2.4 nC, which supports fast switching performance.
The maximum power dissipation for this MOSFET is rated at 500 mW to prevent overheating.
It operates reliably in a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.
This model features dual-channel Type N and Type P configurations, providing versatility for various applications.
It has a low drain-source resistance of 280 milliohms, which helps reduce conduction losses.
Yes, it is qualified to the automotive AEC-Q101 standard, ensuring robust performance in automotive applications.
This MOSFET is suitable for applications including automotive DC load switching, complementary driver stages, and battery protection circuits.
The dimensions of this model are 1 mm in height, 1.6 mm in width, and 2.9 mm in length.
The maximum gate-source voltage for this MOSFET is -20 V to +20 V.
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