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Infineon HEXFET N-Channel MOSFET 57 A 100 V TO-247 Enhancement Mode IRFP3710PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP3710PBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 25mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 190nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| Infineon IRFP3710PBF N-channel MOSFET, 57 A, 100 V HEXFET, 3-Pin TO-247ACBrand | Infineon |
Key Features
- Supports a maximum continuous drain current of 57 A for high power applications.
- Maximum drain-source voltage rating of 100 V ensures device versatility.
- Low on-resistance of 25 milliohms reduces conduction losses.
- Capable of dissipating up to 200 W of power for efficient energy management.
- TO-247 package aids in through-hole mounting and heat dissipation.
- Operates with a gate threshold voltage compatible with standard drive circuits.
- High maximum operating temperature of 175°C for reliability in demanding environments.
- Ideal for use in power supply circuits, motor control, automotive power management, and battery systems.
Product Description
Infineon IRFP3710PBF is a high-performance HEXFET N-Channel Enhancement mode MOSFET with a continuous drain current rating of 57 A and a maximum drain-source voltage of 100 V. Encased in a TO-247 package, it provides efficient power switching and management capabilities suitable for a diverse range of industrial and automotive applications.
This MOSFET exhibits a low on-resistance value of 25 milliohms which minimizes energy loss during conduction, enhancing efficiency. Its robust power dissipation rating of 200 W allows reliable operation in heavy-duty power circuits. The device supports a typical gate charge of 190 nC and operates with a gate voltage range of -20 V to +20 V, enabling compatibility with a range of control signals.
The IRFP3710PBF is designed to operate reliably in high-temperature environments up to 175°C, making it suitable for industrial power management, motor drives, battery management, and automotive electronic systems. Its through-hole TO-247 package ensures convenient integration with circuit boards and improved thermal management.
High current capability supports strong performance in power circuits. Low conduction resistance reduces heat generation. TO-247 package facilitates easy mounting and heat dissipation. Wide temperature operating range ensures longevity and reliability.
Suitable for motor control, power supplies, and automotive applications. Enhancement mode operation allows precise switching control. Robust voltage ratings enable versatile design implementations.
This MOSFET is a reliable solution for complex electronic power management needs in industrial, automotive, and manufacturing sectors. Explore the range of Infineon semiconductor products for advanced and efficient power device applications at EnvMart.
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Frequently Asked Questions
The Infineon IRFP3710PBF supports a maximum continuous drain current of 57 A, making it suitable for high power applications.
This model has a maximum drain-source voltage rating of 100 V, which ensures versatility in various applications.
The on-resistance of this MOSFET is 25 milliohms, which helps to reduce conduction losses during operation.
It is capable of dissipating up to 200 W of power, allowing for efficient energy management in heavy-duty applications.
This MOSFET is encased in a TO-247 package, which aids in through-hole mounting and heat dissipation.
The IRFP3710PBF operates with a gate voltage range of -20 V to +20 V, making it compatible with standard drive circuits.
It can operate reliably at a maximum temperature of 175°C, suitable for demanding environments.
The dimensions of this MOSFET are 20.3 mm in height, 15.9 mm in length, and 5.3 mm in width.
This MOSFET is ideal for use in power supply circuits, motor control, automotive power management, and battery systems.
This model features a pin count of 3, facilitating its integration into various circuit designs.
The typical gate charge for this MOSFET is 190 nC, which is important for switching performance.
This MOSFET features an N-channel design, which is common for enhancement mode applications.
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