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ams OSRAM Infrared Phototransistor 20 ° Half Sensitivity, Through Hole 2-Pin 5 mm (T-1 3/4) Package SFH 313 FA-3/4
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.1mm |
| Brand | ams OSRAM |
| Height | 9mm |
| Length | 5.9mm |
| Model | SFH 313 FA-3/4 |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Series | SFH 313 FA |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 14μs |
| Peak Wavelength | 870nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 20 ° |
| Collector Current | 50mA |
| Maximum Light Current | 12500μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 70V |
| Emitter Collector Voltage | 7V |
Key Features
- Detects infrared spectrum with peak wavelength at 870 nm.
- Features a typical rise and fall time of 14 microseconds.
- Maximum collector current of 50 mA for robust sensing performance.
- Operates from -40°C up to 100°C ambient temperatures.
- Constructed with a clear plastic lens for daylight filtering applications.
- Suitable for computer-controlled flashes, photointerrupters, and industrial electronics.
- Offers a maximum light current of 12,500 μA and dark current of 200 nA.
- Complies with RoHS standards ensuring environmentally safe manufacturing.
Product Description
The ams OSRAM SFH 313 FA-3/4 is an infrared phototransistor designed for through-hole mounting within a 5 mm (T-1 3/4) plastic package featuring a 2-pin configuration. This device detects infrared light with a peak wavelength of 870 nm and provides a narrow 20 ° angle of half sensitivity, making it ideal for precise optoelectronic sensing applications.
With a typical rise and fall time of 14 microseconds, the SFH 313 FA-3/4 offers fast response suitable for dynamic light detection scenarios such as computer-controlled flashes, photointerrupters, and industrial electronics control or drive circuits.
The phototransistor can operate in harsh environments with temperatures ranging from -40°C to 100°C, ensuring reliable performance across a broad range of industrial and commercial settings.
It supports a collector current up to 50 mA, a maximum light current of 12,500 μA, and a very low dark current of 200 nA. The device’s electrical parameters include a maximum collector emitter voltage of 70 V and an emitter collector voltage of 7 V. Its compact 5 mm diameter with approximately 5.9 mm length and width fits seamlessly into circuit boards requiring through-hole mounting.
This phototransistor complies with RoHS environmental standards, aligning with modern requirements for safety and environmental compliance. Applications for this phototransistor include industrial electronics, measurement devices, sensor equipment, and control systems where infrared detection is crucial.
Detects infrared light at 870 nm peak wavelength. 20 ° angle of half sensitivity provides directional sensing. Fast switching with 14 μs rise and fall times. Wide operating temperature from -40°C to 100°C. Maximum collector current rating of 50 mA.
Compact 5mm (T-1 3/4) through-hole package for easy PCB assembly. Low dark current enhances sensitivity and accuracy. RoHS compliant for environmental safety. Suitable for industrial, laboratory, and commercial optoelectronic applications.
Discover more ams OSRAM Phototransistors and other optoelectronic components on EnvMart for your electronics projects and industrial needs.
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Frequently Asked Questions
The peak wavelength of this infrared phototransistor is 870 nm, making it suitable for detecting infrared light.
This model has a maximum collector current rating of 50 mA, allowing for robust sensing performance.
It operates within a temperature range of -40°C to 100°C, ensuring reliable performance in various environments.
The typical rise and fall time for this phototransistor is 14 microseconds, providing fast response suitable for dynamic light detection.
The dimensions of this unit are approximately 5.9 mm in length and width, with a diameter of 5.1 mm and a height of 9 mm.
It comes in a 5 mm (T-1 3/4) through-hole package, designed for easy PCB assembly.
The angle of half sensitivity for this model is 20 °, allowing for directional sensing capabilities.
The maximum light current for this phototransistor is 12,500 μA, enhancing its sensitivity.
It complies with RoHS standards, ensuring environmentally safe manufacturing practices.
This phototransistor is suitable for applications in industrial electronics, measurement devices, and control systems requiring infrared detection.
The maximum collector emitter voltage for the SFH 313 FA-3/4 is 70 V, providing a robust operational limit.
This phototransistor features a 2-pin configuration, suitable for through-hole mounting.
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