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ams OSRAM Phototransistor, Through Hole 2-Pin 3 mm (T-1) Package, 24 ° Angle Sensitivity SFH 309-5/6
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 3.1mm |
| Brand | ams OSRAM |
| Height | 5.2mm |
| Length | 4mm |
| Model | SFH 309-5/6 |
| Width | 4mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 100°C |
| Package Type | 3 mm (T-1) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 7μs |
| Peak Wavelength | 860nm |
| Spectrums Detected | Ultraviolet, Infrared, Visible Light |
| Angle of Half Sensitivity | 24 ° |
| Collector Current | 15mA |
| Maximum Light Current | 11200μA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 35V |
Key Features
- Through hole 2-pin mounting for easy PCB integration.
- 3 mm (T-1) package diameter with compact 4 x 4 x 5.2 mm dimensions.
- Fast response times with typical rise and fall times of 7 microseconds.
- High maximum light current of 11.2 mA and low dark current of 200 nA.
- Wide operating temperature range from -40°C to 100°C ensures durability.
- Collector emitter voltage rating of 35 V suits diverse electronic applications.
- Compliant with RoHS standards for environmental safety.
- Peak wavelength sensitivity at 860 nm for infrared detection.
Product Description
ams OSRAM SFH 309-5/6 is a precision phototransistor designed for detecting ultraviolet, infrared, and visible light spectrums. Housed in a compact 3 mm (T-1) through hole package with 2 pins, it facilitates straightforward mounting on printed circuit boards (PCBs).
This phototransistor features a narrow 24 ° angle of half sensitivity, enabling focused light detection with high accuracy. Its fast response with 7 µs typical rise and fall times allows use in dynamic sensing environments.
The device supports a substantial maximum light current of 11.2 mA alongside a minimal dark current of 200 nA, ensuring efficient signal acquisition and low noise interference. It operates reliably over a broad temperature range spanning -40°C to 100°C, suitable for harsh industrial and environmental conditions.
With a collector emitter voltage maximum rating of 35 V, the SFH 309-5/6 phototransistor integrates effectively into a variety of electronic circuits and sensor modules. Its peak sensitivity wavelength at 860 nm enhances infrared detection capabilities for applications including optical communication, light sensing, and ambient light measurement.
Through hole 2-pin mounting makes it ideal for PCB assembly and prototyping. RoHS compliant construction ensures adherence to environmental regulations. Compact dimensions (4 mm length, 4 mm width, 5.2 mm height) support space-constrained designs.
Suitable for use in industrial machinery, laboratory instruments, automotive electronics, and consumer electronics. Set a standard component for optoelectronic sensing and light detection across multiple sectors.
Explore a wide range of Phototransistors and optoelectronic components in the Electronics & Electricals category at EnvMart to enhance your device’s sensing functionality with reliable, industrial-grade products.
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Frequently Asked Questions
The maximum light current of this phototransistor is 11.2 mA.
It has a peak wavelength sensitivity at 860 nm, which enhances its infrared detection capabilities.
This model operates reliably over a temperature range from -40°C to 100°C.
It utilizes a through hole 2-pin mounting, which facilitates easy integration on printed circuit boards (PCBs).
The dimensions are 4 mm in length, 4 mm in width, and 5.2 mm in height.
The collector emitter voltage rating is 35 V, making it suitable for various electronic applications.
The angle of half sensitivity is 24 °, allowing for focused light detection.
It can detect ultraviolet, infrared, and visible light spectrums.
The typical rise and fall times are both 7 microseconds, enabling fast response in dynamic sensing environments.
Yes, it is compliant with RoHS standards for environmental safety.
The maximum dark current is 200 nA, ensuring low noise interference during operation.
This phototransistor has one channel.
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