onsemi Infrared Phototransistor Through Hole 4-Pin Custom 4L Package QRD1113

The onsemi QRD1113 is an Infrared Phototransistor supplied in a custom 4L through-hole package with 4 pins. It is designed to detect infrared light with a peak wavelength of 940nm, providing a fast response time with a typical rise time of 10µs and fall time of 50µs. The device includes an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a compact black plastic housing.

This phototransistor operates reliably within a temperature range of -40°C to 85°C and supports a collector current of up to 0.3mA. It features a maximum dark current of 100nA, collector-emitter voltage of 30V, and emitter-collector voltage of 5V. The component's height is 4.65mm, width is 6.1mm, and length is 4.39mm, making it suitable for space-constrained circuit boards.

The QRD1113 phototransistor is ideal for sensing reflective objects or surfaces without requiring contact, being unfocused to detect diffused surfaces. Its daylight filter enhances its stability in varied lighting conditions.

Detects infrared spectrum with a peak wavelength of 940nm. Operates with a fast rise time of 10 microseconds and fall time of 50 microseconds. Supports collector current up to 0.3mA with low dark current. Works between -40°C and 85°C operating temperature limits.

Compact custom 4L through-hole package with 4 pins. Designed for use in medical electronics, automation, test and measurement, and building control applications. Includes a photo darlington responding to radiation from the built-in infrared diode.

This product is supplied in bulk packaging and is well-suited for industrial, laboratory, automation, and commercial electronics projects requiring accurate infrared detection. Explore more Phototransistors and optoelectronic components on EnvMart for diverse application needs.