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ams OSRAM Infrared Phototransistor SMT SIDELED, 35V Max Collector Emitter, 80μA Max Light Current SFH 325 FA

Category Phototransistor Brand ams OSRAM Condition New

Specifications

Country of Origin India
Brand ams OSRAM
Model SFH 325 FA
Series SFH 325 FA
Maximum Operating Temperature 100°C
Package Type SMT SIDELED
Minimum Operating Temperature -40°C
Number Of Channels 1
Typical Fall Time 7μs
Spectrums Detected Infrared
Collector Current 15mA
Maximum Light Current 80μA
Maximum Dark Current 50nA
Collector Emitter Voltage 35V

Key Features

  • Infrared NPN phototransistor designed for surface mount technology.
  • 35V maximum collector emitter voltage enables robust operation.
  • Typical fall and rise times of 7μs for quick response.
  • Maximum light current of 80μA with high linearity performance.
  • Operates reliably over -40°C to 100°C temperature range.
  • Maximum collector current rating of 15mA supports diverse loads.
  • Package features P-LCC-2 format with black epoxy housing.
  • 1 channel configuration suited for signal detection tasks.

Product Description

ams OSRAM SFH 325 FA Infrared Phototransistor is a compact, high-sensitivity optoelectronic sensor designed for surface mount applications requiring reliable infrared detection. This NPN silicon phototransistor comes in an SMT SIDELED® package, facilitating easy integration into automated production lines and PCB assemblies.

The SFH 325 FA offers a maximum collector emitter voltage of 35V, making it suitable for a range of industrial, consumer electronics, and gesture recognition tasks. Its high linearity and fast response, with typical fall and rise times of just 7μs, ensure consistent performance and accurate infrared signal detection.

Infrared spectrum detection enhances non-contact sensing capabilities. 7μs rise and fall times enable rapid phototransistor response. 80μA maximum light current ensures high sensitivity. 50nA maximum dark current for low noise operation.

Singe-channel format ideal for focused applications. P-LCC-2 package with black epoxy provides durability and efficient SMD mounting. Operating temperature range of -40°C to 100°C allows use in harsh environments. 15mA collector current accommodates multiple load types.

Electrostatic discharge resistance of 2 kV (ANSI/ESDA/JEDEC JS-001) for safe handling.

Designed for gesture recognition, personal computer interfaces, industrial equipment, and consumer electronics, the SFH 325 FA is well-suited for signal detection, automatic control, and optical communication systems. Its robust design and Surface Mount Technology (SMT) compatibility make it highly efficient for modern manufacturing processes.

Common applications include industrial automation, laboratory instrumentation, sensor arrays, and optoelectronic measurement systems. The package is supplied on a reel, supporting insertion into automated machinery for enhanced production efficiency.

Explore more high-performance optoelectronic components from ams OSRAM in the Phototransistor category on EnvMart.

ams OSRAM Infrared Phototransistor SMT SIDELED, 35V Max Collector Emitter, 80μA Max Light Current SFH 325 FA
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Frequently Asked Questions

The maximum collector emitter voltage for the SFH 325 FA is 35V.

The typical fall time of this model is 7μs, which contributes to its quick response capabilities.

This phototransistor has a maximum light current rating of 80μA, ensuring high sensitivity for infrared detection.

The operating temperature range for the SFH 325 FA is from -40°C to 100°C, allowing it to function in harsh environments.

The maximum collector current rating for the SFH 325 FA is 15mA, accommodating various load types.

The SFH 325 FA comes in a P-LCC-2 package type with black epoxy housing, designed for surface mount technology (SMT).

The maximum dark current for this model is 50nA, which helps in maintaining low noise operation.

This phototransistor is a single-channel device, making it suitable for focused applications.

This model is designed for applications such as gesture recognition, industrial equipment, and consumer electronics, particularly in signal detection tasks.

The rise time for this phototransistor is also typically 7μs, ensuring a rapid response to infrared signals.

The SFH 325 FA is manufactured in India.

This model is designed to detect infrared spectrum, enhancing its non-contact sensing capabilities.

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