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onsemi UniFET Type N-Channel MOSFET, 39 A, 200 V Enhancement Mode, 3-Pin TO-220 Package FDPF39N20
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FDPF39N20 |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 66mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Features an enhancement mode channel suited for power conversion systems.
- 3-Pin TO-220 package enables convenient through-hole mounting.
- Maximum power dissipation of 37 W supports high efficiency.
- Low drain-source resistance of 66 mΩ ensures minimal conduction losses.
- Operates over a wide temperature range from -55°C to 150°C.
- Gate charge of 38 nC allows for superior switching speed.
- Maximum gate-source voltage rating of 30 V protects against voltage spikes.
- Designed for industrial applications including power factor correction and electronic ballast circuits.
Product Description
onsemi FDPF39N20 UniFET Type N-Channel MOSFET is a reliable, high voltage semiconductor device suitable for industrial power switching applications. It features an enhancement mode N-channel with a maximum continuous drain current of 39 A and can withstand drain-source voltages up to 200 V. The 3-pin TO-220 package facilitates through-hole mounting, providing mechanical robustness and ease of installation.
With a low on-state resistance of 66 mΩ, this MOSFET minimizes conduction losses and enhances overall system efficiency. It can dissipate up to 37 W of power, making it suitable for demanding power converter designs. The gate charge of 38 nC ensures fast switching performance, important for power factor correction and electronic lighting ballasts.
The device operates safely within temperature ranges from -55°C up to 150°C, ensuring durability across various environments. Maximum gate-source voltage of 30 V helps protect the MOSFET from voltage spikes. Its compact physical dimensions (16.07 mm height, 10.36 mm length, and 4.9 mm width) support dense circuit designs.
UniFET MOSFET technology is known for superior avalanche energy strength and internal protection diodes allowing withstand of high surge stresses. This makes it well-suited for numerous industrial uses, including switching power supplies, flat panel televisions, ATX power supplies, and electronic lamp ballasts.
Set yourself up for efficient and durable semiconductor performance with the onsemi FDPF39N20 MOSFET, designed with the latest UniFET technology for power electronics. Ideal for applications in industrial manufacturing, electric drivers, and power control systems.
Features an enhancement mode channel suited for power conversion systems. 3-Pin TO-220 package enables convenient through-hole mounting. Maximum power dissipation of 37 W supports high efficiency. Low drain-source resistance of 66 mΩ ensures minimal conduction losses.
Operates over a wide temperature range from -55°C to 150°C. Gate charge of 38 nC allows for superior switching speed. Maximum gate-source voltage rating of 30 V protects against voltage spikes. Compact dimensions: height 16.07 mm, length 10.36 mm, and width 4.9 mm.
Designed for industrial applications including power factor correction and electronic ballast circuits. Discover more industrial and semiconductor products in the MOSFET category on EnvMart to complete your power electronics setup.
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Frequently Asked Questions
The maximum continuous drain current for this model is 39 A.
This MOSFET can withstand a maximum drain-source voltage of 200 V.
The dimensions of the TO-220 package are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The maximum power dissipation for this model is 37 W.
The typical gate charge is 38 nC at Vgs.
It operates over a wide temperature range from -55°C to 150°C.
The low drain-source resistance is 66 mΩ, which minimizes conduction losses.
The TO-220 package supports through-hole mounting, providing mechanical robustness.
The maximum gate-source voltage rating is 30 V, protecting against voltage spikes.
This MOSFET is designed for industrial applications including power factor correction and electronic ballast circuits.
This model belongs to the UniFET series of MOSFETs.
It features an enhancement mode N-channel design.
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