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DiodesZetex Isolated 2 N-Channel Power MOSFET, Surface Mount SOIC 8-Pin, 60 V, 4.1 A, 1.5 W DMN6070SSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMN6070SSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 5.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.75V |
| Transistor Configuration | Isolated |
Key Features
- Isolated dual N-channel MOSFET configuration ideal for efficient power management.
- Maximum drain current rating of 4.1 A for robust power handling.
- Operating voltage up to 60 V with a low on-resistance of 100 mΩ.
- Surface mount SOIC package with 8 pins allows for compact PCB layout.
- Supports automotive standard AEC-Q101 and meets RoHS and J-STD-020 compliance.
- Wide operating temperature range from -55°C to +150°C ensures reliability in harsh conditions.
- Typical gate charge of 5.6 nC facilitates fast switching performance.
- Maximum power dissipation of 1.5 W suitable for moderate power applications.
Product Description
DiodesZetex DMN6070SSD-13 is an isolated dual N-Channel power MOSFET designed for surface mounting in SOIC 8-pin format. It is capable of handling a maximum continuous drain current of 4.1 A and can operate up to 60 V, making it suitable for various power management and switching applications.
This component features a low maximum drain-source resistance of 100 mΩ and an enhancement mode channel, offering efficient conduction and switching performance. The device operates reliably over a wide temperature range from -55°C to +150°C, ensuring durability in automotive and industrial environments. It also complies with standards such as J-STD-020, RoHS, UL 94V-0 for flammability, MIL-STD-202, and automotive standard AEC-Q101, highlighting its robust construction.
The typical gate charge of 5.6 nC supports rapid switching cycles, ideal for power converter circuits and motor control. Its compact dimensions (4.95 mm length, 3.95 mm width, 1.5 mm height) and 8-pin SOIC package allow for efficient PCB space utilization.
Isolated dual N-channel MOSFET for enhanced functionality. Maximum continuous drain current of 4.1 A at 60 V drain-source voltage. Low gate charge enabling high-speed switching. Surfaces mount SOIC 8-pin package suitable for automated assembly.
Wide operating temperature range for demanding conditions. Compliance with multiple reliability and safety standards. Compact footprint facilitating dense circuit design. Typical forward voltage of 0.75 V aids in power loss calculations.
Maximum power dissipation of 1.5 W supports moderate load applications.
Applications include power supply circuits, automotive electronics, industrial controllers, and any other system requiring reliable medium-Power MOSFET switching elements. The DMN6070SSD-13 offers a balance of performance, size, and reliability tailored for professional electronic design.
Explore our extensive selection of power semiconductor components including MOSFETs, IGBTs, and diodes at EnvMart to meet diverse industrial and commercial requirements with quality and assurance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.1 A.
It can operate at a maximum voltage of 60 V.
This model comes in a surface mount SOIC 8-pin package.
The operating temperature range is from -55°C to +150°C.
The typical gate charge is 5.6 nC.
It has dimensions of 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
The maximum power dissipation is 1.5 W.
It complies with J-STD-020, AEC-Q101, RoHS, UL 94V-0, and MIL-STD-202 standards.
This model features an enhancement mode N-channel configuration.
The maximum drain-source resistance is 100 mΩ.
It is suitable for power supply circuits, automotive electronics, and industrial controllers.
The typical forward voltage is 0.75 V.
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