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Vishay Silicon Junction Switching Diode 150 mA 100 V 3-Pin Surface Mount SOT-23 BAV99-E3-08

Category Discrete Semiconductors Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.05mm
Length 3.1mm
Model BAV99-E3-08
Width 1.43mm
Mount Type Surface
Maximum Operating Temperature 150°C
Case DO-204AL, molded epoxy over glass body
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Polarity Color band denotes cathode end
Terminals Matte tin plated leads, solderable per
Pin Count 3
Maximum Power Dissipation Pd 300mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 4.5A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 6ns
Maximum Forward Current If 150mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • Maximum forward current rating of 150 mA ensures dependable performance.
  • Peak reverse repetitive voltage rated at 100 V for robust diode operation.
  • Fast switching time of 6 ns ideal for efficient electronic circuits.
  • Low typical leakage current less than 0.2 μA enhances energy efficiency.
  • High forward surge capability for transient current tolerance.
  • Compact dimensions of 3.1 mm length, 1.43 mm width, and 1.05 mm height.
  • Surface mount SOT-23 package suitable for modern PCB assembly.
  • Operating temperature range from -55°C to 150°C for diverse environments.

Product Description

Vishay BAV99-E3-08 is a silicon junction switching diode designed with a superectifier structure providing high reliability and fast switching performance in electronic circuits.

Its glass-passivated junction and cavity-free design ensure durability and stable electrical characteristics. The diode supports a maximum forward current of 150 mA and withstands reverse repetitive voltage up to 100 V, making it suitable for a wide range of applications.

The SOT-23 surface mount package with three pins allows compact PCB integration while maintaining excellent thermal performance with a maximum power dissipation of 300 mW.

Typical applications include high voltage rectification in G2 grids of CRTs and TVs, snubber circuits in camera flashes, and general-purpose switching tasks in power and signal control.

The device features a peak reverse recovery time of 6 ns enabling fast switching speeds essential in digital and switching power supplies. The diode terminals are matte tin plated and comply with J-STD-002 and JESD 22-B102 solderability standards, ensuring reliable assembly and long-term service.

The diode operates reliably from -55°C to 150°C ambient conditions, supporting demanding industrial, commercial, and consumer electronic applications. Maximum forward current rating of 150 mA ensures dependable performance.

Peak reverse repetitive voltage rated at 100 V for robust diode operation. Fast switching time of 6 ns ideal for efficient electronic circuits. Low typical leakage current less than 0.2 μA enhances energy efficiency. High forward surge capability for transient current tolerance.

Compact dimensions: 3.1 mm length, 1.43 mm width, 1.05 mm height. Surface mount package (SOT-23) suitable for modern PCB assembly. Operating temperature range from -55°C to 150°C for diverse environments. Glass passivated junction improves device reliability and longevity.

Terminals with matte tin plating ensure solderability per industry standards. Choose Vishay BAV99-E3-08 diode for superior switching performance in semiconductor discrete component designs across industrial and consumer electronics.

Explore more Discrete Semiconductors by Vishay and similar components in the Electronics & Electricals category at EnvMart.

Vishay Silicon Junction Switching Diode 150 mA 100 V 3-Pin Surface Mount SOT-23 BAV99-E3-08
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Frequently Asked Questions

The maximum forward current rating of this diode is 150 mA, ensuring dependable performance in various applications.

The peak reverse repetitive voltage rated for the BAV99-E3-08 is 100 V, allowing for robust operation in electronic circuits.

This model features a fast switching time of 6 ns, making it suitable for efficient electronic circuits and applications requiring quick response times.

The compact dimensions of this diode are 3.1 mm in length, 1.43 mm in width, and 1.05 mm in height, making it suitable for surface mount applications.

The BAV99-E3-08 operates reliably within an ambient temperature range of -55°C to 150°C, accommodating diverse environmental conditions.

This diode is housed in an SOT-23 surface mount package, which is suitable for modern PCB assembly.

The maximum power dissipation for this diode is 300 mW, which allows it to handle significant power levels in applications.

The BAV99-E3-08 can withstand a peak non-repetitive forward surge current of 4.5 A, providing high surge capability.

It features matte tin plated leads that comply with solderability standards, ensuring reliable assembly in electronic devices.

This model has a series diode configuration, making it suitable for various electronic circuit designs.

The typical leakage current for this diode is less than 0.2 μA, which enhances energy efficiency in applications.

The BAV99-E3-08 is classified as a silicon junction diode, which is known for its reliability and fast switching performance.

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