Infineon Isolated OptiMOS 2 N-Channel MOSFET 60 V 300 mA Enhancement Mode 6-Pin SC-88 2N7002DWH6327XTSA1

Infineon 2N7002DWH6327XTSA1 Isolated OptiMOS 2 N-Channel MOSFET is designed for low-power switching in compact electronic assemblies. It supports a maximum drain-source voltage of 60 V with a continuous drain current of 300 mA, making it ideal for microcontroller-driven load switching and battery management applications.

The device operates in enhancement mode and incorporates two transistor elements on a single chip, providing dual-channel switching capabilities without the need for external matching components. Packaged in a compact SC-88 6-pin surface-mount format, it integrates easily into space-constrained printed circuit boards.

With a low maximum drain-source resistance of 4 Ω, and a typical gate charge of 0.4 nC, this MOSFET achieves efficient conduction and switching performance. It dissipates up to 500 mW of power and withstands operating temperatures from -55°C to 150°C, ensuring high reliability in harsh automotive and industrial environments. The transistor's isolated configuration enhances its electrical performance.

This MOSFET is suitable for replacing small relays, interfacing sensors in automotive systems, and controlling compact power paths in industrial and manufacturing settings. Its automotive standard AEC-Q101 certification confirms its reliability in automotive electronics.

Package details specify the use of an SC-88 surface-mount package with six pins requiring compatible PCB pad layouts for thermal management and connectivity. Forward voltage under conduction is approximately 0.96 V, specifying expected voltage drop in switching circuits.

This MOSFET supports up to 60 V drain-source voltage for high-voltage switching. Continuous drain current rating of 300 mA suits low-current applications. Enhancement mode operation with dual elements per chip for compact switching.

Small SC-88 6-pin surface-mount package for easy PCB integration. Maximum power dissipation 500 mW with robust thermal stability. Fast switching enabled by 0.4 nC typical gate charge. Wide operating temperature range from -55°C to 150°C.

Automotive standard AEC-Q101 certified for reliable automotive use.

This product is ideal for industrial, automotive, manufacturing, and embedded electronic environments. Explore more semiconductors and MOSFETs at EnvMart for your electronic component needs.