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onsemi General Purpose NPN Transistor 3 A Maximum Collector Current 40 V DC Collector Emmiter Voltage 4-Pin NJT4031NT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model NJT4031NT1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 40V dc
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
onsemi Transistor, 3 A NPN, 25 V, 3-Pin SOT-223Brand onsemi

Key Features

  • Supports maximum DC collector current of 3 amperes.
  • Maximum collector emitter voltage rating is 40 volts DC.
  • Surface mount transistor in compact 4-Pin SOT-223 package.
  • Offers a minimum DC current gain (hFE) of 100 ensuring efficient amplification.
  • Operates within temperature range of -55°C to 150°C.
  • Maximum power dissipation rated at 2 watts for reliable performance.
  • Designed to meet automotive AEC-Q101 standard for quality assurance.
  • Maximum transition frequency of 1 MHz suitable for switching applications.

Product Description

onsemi NJT4031NT1G is a high-quality, general purpose NPN bipolar transistor intended for applications requiring reliable switching and amplification with a maximum collector current capacity of 3 amperes and collector emitter voltage rating of 40 volts DC. Housed in a compact surface-mount 4-Pin SOT-223 package, it offers a minimum DC current gain of 100, making it suitable for various electronic circuits.

This transistor supports a broad operating temperature range from -55°C to 150°C, ensuring stable operation under harsh environmental conditions. Its maximum power dissipation of 2 watts allows the device to handle reasonable power loads without thermal issues. The transistor's maximum transition frequency of 1 MHz is well-suited for switching and amplification tasks in low to medium frequency applications.

The device complies with the automotive AEC-Q101 standard, denoting its qualification for automotive and industrial electronics requiring stringent reliability and quality standards. The physical dimensions - length 6.7 mm, width 3.7 mm, and height 1.75 mm - facilitate integration into compact PCB designs, especially where surface mounting is preferred.

Typical applications include power amplification and switching in automotive electronics, industrial control systems, and general electronics manufacturing. The transistor's single NPN configuration simplifies design integration for engineers requiring a dependable bipolar junction transistor for medium current applications.

Maximum DC collector current: 3 A. Maximum collector emitter voltage: 40 V DC. Package type: 4-Pin Surface mount SOT-223. Minimum DC current gain (hFE): 100. Operating temperature range: -55°C to 150°C. Maximum power dissipation: 2 W.

Meets automotive standard AEC-Q101 for automotive electronics. Maximum transition frequency: 1 MHz. Compact physical dimensions: 6.7 x 3.7 x 1.75 mm. Single NPN transistor configuration.

Explore more high-quality Bipolar Transistors and semiconductor components in the Electronics and Electricals category at EnvMart for your industrial, automotive, and manufacturing needs.

onsemi General Purpose NPN Transistor 3 A Maximum Collector Current 40 V DC Collector Emmiter Voltage 4-Pin NJT4031NT1G
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Frequently Asked Questions

The maximum collector current for this model is 3 amperes.

The collector-emitter voltage rating is 40 volts DC.

It offers a minimum DC current gain (hFE) of 100.

The operating temperature range is from -55°C to 150°C.

The maximum power dissipation is rated at 2 watts.

It is housed in a compact 4-Pin SOT-223 surface mount package.

The maximum transition frequency is 1 MHz, suitable for switching applications.

This transistor complies with the automotive AEC-Q101 standard for quality assurance.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

The maximum emitter-base voltage (VEBO) is 6 volts.

Typical applications include power amplification and switching in automotive electronics and industrial control systems.

This model features a single NPN transistor configuration.

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