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onsemi P-Channel MOSFET 470 mA 30 V Enhancement 3-Pin SOT-23 BSH203,215

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onsemi P-Channel MOSFET 470 mA 30 V Enhancement 3-Pin SOT-23 BSH203,215

Name: onsemi P-Channel MOSFET 470 mA 30 V Enhancement 3-Pin SOT-23 BSH203,215
Brand: onsemi
SKU: 128692
Price: 0.22 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	1mm
Length	3mm
Model	BSH203,215
Width	1.4mm
Mount Type	Surface
Series	BSH203
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	470mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	900mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	417mW
Typical Gate Charge Qg @ Vgs	2.2nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.3V

Key Features

This MOSFET features an enhancement mode channel.
It has a maximum drain source resistance of 900 milliohms.
The device supports a maximum power dissipation of 417 milliwatts.
Operating temperature ranges from -55°C to 150°C for durable performance.
The typical gate charge at Vgs is 2.2 nanocoulombs ensuring efficient switching.
It offers a maximum gate source voltage of -8 V to +8 V.
The forward voltage rating is -1.3 V suitable for precise applications.
Designed for surface mount technology with a 3-pin count for easy integration.

Product Description

Nexperia BSH203,215 is a P-Channel MOSFET designed for efficient switching applications with a maximum continuous drain current of 470 mA and a drain source voltage rating of 30 V, packaged in a compact 3-pin SOT-23 surface mount form factor.

This enhancement mode MOSFET features a low maximum drain source resistance of 900 milliohms and a power dissipation rating of 417 milliwatts, making it suitable for low-power electronics and power management systems.

The device’s operating temperature range extends from -55°C to 150°C, ensuring reliable performance in a variety of industrial and commercial environments including consumer electronics, automotive circuits, and power supply modules.

Additional electrical characteristics include a typical gate charge of 2.2 nanocoulombs and a forward voltage of -1.3V, providing fast switching capabilities and improved efficiency in circuit design.

Physical dimensions are optimized for dense PCB layouts with a length of 3mm, width of 1.4mm, and height of 1mm. It is compliant with surface mount assembly methods for streamlined manufacturing.

This MOSFET is appropriate for use in industrial control systems, laboratory instruments, power regulation circuits, communication devices, and embedded systems. Its compact SOT-23 package aids in minimizing board space utilization in electronic assemblies.

Manufactured in China with latest precision semiconductor fabrication techniques.

Choose the Nexperia BSH203,215 P-Channel MOSFET for robust, reliable and efficient electronic switching solutions. Discover more products in the Semiconductor, MOSFET category at EnvMart.

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Frequently Asked Questions

The maximum continuous drain current of this model is 470 mA.

It has a maximum drain source voltage rating of 30 V.

This device is packaged in a SOT-23 format and has a pin count of 3.

The operating temperature range extends from -55°C to 150°C.

The maximum power dissipation rating is 417 milliwatts.

It features a maximum drain source resistance of 900 milliohms.

The typical gate charge at Vgs is 2.2 nanocoulombs.

The forward voltage rating is -1.3 V.

This model has a P-channel type.

Yes, it is designed for surface mount technology with a compact SOT-23 package.

It is manufactured in China.

It is suitable for applications in industrial control systems, laboratory instruments, power regulation circuits, communication devices, and embedded systems.