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Vishay N-Channel MOSFET, 60 V, 6.2 A, Enhancement Mode, 8-Pin SO-8 Package SI7850DP-T1-E3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.04mm |
| Length | 4.9mm |
| Model | SI7850DP-T1-E3 |
| Width | 5.89mm |
| Mount Type | Surface |
| Series | Si7850DP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8Brand | Vishay |
Key Features
- Enhancement mode channel for reliable switching performance.
- Maximum power dissipation of 1.8 W ensuring efficient thermal handling.
- Low maximum drain source resistance of 22 mΩ for reduced conduction losses.
- Wide gate source voltage range from -20 V to +20 V.
- Compact dimensions of 4.9 mm length, 5.89 mm width, and 1.04 mm height.
- Typical gate charge of 18 nC at specified gate voltage supports fast switching.
- Operating temperature range from -55°C to 150°C for robust industrial use.
- Surface mount SO-8 package with 8 pins suited for compact PCB layouts.
Product Description
Vishay SI7850DP-T1-E3 is a high-quality N-Channel MOSFET designed for industrial and electronics applications requiring efficient power switching and robust performance. It operates at a maximum drain source voltage of 60 V and can handle continuous drain currents of up to 6.2 A.
The enhancement mode device is housed in an 8-pin SO-8 surface-mount package that enables compact PCB designs and reliable mounting. With a low drain source resistance of 22 mΩ, the MOSFET ensures minimal conduction losses during operation.
This MOSFET supports a wide gate-source voltage range from -20 V to +20 V, facilitating flexible gate drive designs. The typical gate charge of 18 nC at the gate voltage promotes fast switching speeds, making it suitable for switching and amplification tasks.
The component is engineered to operate reliably within a temperature range from -55°C to 150°C, supporting demanding industrial, automotive, and consumer electronics applications requiring high thermal resilience.
Enhancement mode N-Channel technology for efficient switching performance. Maximum continuous drain current rating of 6.2 A ensures capability for moderate power loads. Low on-resistance of 22 mΩ reduces power loss and heat generation.
Wide gate source voltage rating (-20 V to +20 V) supports various control schemes. Compact SO-8 package with 8 pins accommodates tight PCB layouts. Power dissipation rating of 1.8 W suits small to medium power applications.
Operating temperature range supports use in harsh environmental conditions. Forward voltage of 1.2 V improves efficiency in switching operations.
This Vishay SI7850DP-T1-E3 N-Channel MOSFET is ideal for use in industrial controls, power management circuits, consumer electronics, and other applications requiring reliable MOSFET switching performance. It is designed to meet the needs of modern electronics industries by enabling efficient power conversion and management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.2 A.
The maximum drain source voltage is 60 V.
The typical gate charge is 18 nC at the specified gate voltage.
It operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in an 8-pin SO-8 surface mount package.
The maximum power dissipation rating is 1.8 W.
The maximum gate-source voltage is -20 V to +20 V.
The dimensions are 4.9 mm in length, 5.89 mm in width, and 1.04 mm in height.
The maximum drain-source resistance is 22 mΩ.
This model is suitable for industrial controls, power management circuits, and consumer electronics applications.
It utilizes an enhancement mode N-channel design.
The forward voltage is 1.2 V.
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