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Vishay N-Channel Enhancement MOSFET, 9.9 A Continuous Drain Current, 200 V Drain-Source Voltage, 3-Pin TO-220 IRLI640GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 4.8mm |
| Model | IRLI640GPBF |
| Width | 10.3mm |
| Mount Type | Through Hole |
| Series | IRLI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 2V |
Key Features
- Features a TO-220 package with 3 pins suitable for through-hole mounting.
- Maximum power dissipation capability of 40 W supports robust operation.
- Low maximum drain-source resistance at 180 mΩ improves efficiency.
- Wide operating temperature range from -55°C to 150°C ensures reliability.
- Maximum gate-source voltage rating of ±10 V enhances device protection.
- Typical gate charge of 66 nC enables fast switching performance.
- Compact dimensions with height 9.8 mm, width 10.3 mm, and length 4.8 mm.
- Forward voltage drop of 2 V contributes to minimal conduction losses.
Product Description
Vishay IRLI640GPBF is an N-channel enhancement mode MOSFET in a TO-220 package designed for power switching and load driving applications. It features a maximum continuous drain current of 9.9 A and maximum drain-source voltage of 200 V, making it suitable for industrial, commercial, and electronic applications requiring efficient current control and power management.
The device operates reliably in a wide temperature range from -55 degrees Celsius up to 150 degrees Celsius, with a maximum power dissipation rating of 40 W that allows it to handle substantial loads without thermal degradation. Its low drain-source resistance of 180 milliohms at specified test conditions ensures low conduction losses and improved system efficiency.
This MOSFET incorporates a maximum gate-source voltage tolerance of ±10 V and a typical gate charge of 66 nC, enabling precise and fast switching performance in PWM circuits, motor drivers, and power converters. The forward voltage drop of 2 V contributes to minimized power dissipation during operation.
The compact TO-220 package with three pins supports through-hole mounting on printed circuit boards, allowing easy integration into various designs. The dimensions (height: 9.8 mm, width: 10.3 mm, length: 4.8 mm) facilitate installation in constrained spaces.
Manufactured in China, the IRLI640GPBF MOSFET meets industrial demands for durability and performance across electronics, power management, and automation sectors. Features a TO-220 package with 3 pins suitable for through-hole mounting.
Maximum power dissipation capability of 40 W supports robust operation. Low maximum drain-source resistance at 180 mΩ improves efficiency. Wide operating temperature range from -55°C to 150°C ensures reliability. Maximum gate-source voltage rating of ±10 V enhances device protection.
Typical gate charge of 66 nC enables fast switching performance. Compact dimensions with height 9.8 mm, width 10.3 mm, and length 4.8 mm. Forward voltage drop of 2 V contributes to minimal conduction losses. Constructed in China under Vishay Semiconductor standards.
Suitable for industrial, laboratory, electronics manufacturing, and automation uses, the Vishay IRLI640GPBF is a reliable discrete semiconductor component engineered for performance and efficiency. Explore more power semiconductor devices in the Vishay range at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.9 A.
It has a maximum drain-source voltage rating of 200 V.
The maximum power dissipation capability is 40 W.
The maximum gate-source voltage rating is ±10 V.
The typical gate charge is 66 nC.
The dimensions are height 9.8 mm, width 10.3 mm, and length 4.8 mm.
The maximum drain-source resistance is 180 mΩ.
It operates in a wide temperature range from -55°C to 150°C.
This model supports through-hole mounting.
The forward voltage drop is 2 V.
It is suitable for industrial, commercial, and electronic applications requiring efficient current control and power management.
The TO-220 package has a pin count of 3.
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