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onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A Continuous Drain Current, 30 V Drain Source Voltage FDS4935BZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS4935BZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 29nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -0.8V |
| Transistor Configuration | Isolated |
| Dual P-Channel MOSFET Transistor, 5 A, 30 V, 8-Pin SOIC Fairchild FDS4953Brand | Fairchild Semiconductor |
Key Features
- Designed as an enhancement mode transistor for efficient power switching applications.
- Features a power dissipation rating of 1.6 W, suitable for surface mount use.
- Equipped with a low drain source resistance of 22 mΩ for minimal power loss.
- Operates across a temperature range from -55°C to 150°C ensuring reliable performance.
- Comes with a typical gate charge of 29 nC, facilitating fast switching.
- Isolated transistor configuration with dual P-Channel elements integrated per chip.
- Robust maximum gate-source voltage tolerance of -25 V to +25 V supports industrial standards.
- Widely used in power management and synchronous rectification in AC/DC power supplies.
Product Description
onsemi FDS4935BZ is an Isolated PowerTrench 2 Type P-Channel MOSFET designed for efficient power switching in industrial electronic systems. It delivers a maximum continuous drain current of 6.9 A and supports a maximum drain source voltage of 30 V in a compact 8-Pin SOIC surface mount package.
This MOSFET features a low maximum drain source resistance (Rds) of 22 mΩ which minimizes conduction losses, improving overall energy efficiency. Its enhancement channel mode design and typical gate charge of 29 nC enable rapid switching, making it highly suitable for synchronous rectification applications.
The device operates effectively in a temperature range of -55°C to 150°C and has a power dissipation capacity of 1.6 watts. It incorporates an isolated transistor configuration combining two P-Channel elements per chip, contributing to system density and performance. The maximum gate-source voltage rating of -25 to +25 volts allows compatibility with various industrial control voltage levels.
Physical dimensions are compact, with a length of 5 mm, width of 4 mm, and height of 1.5 mm, enabling space-efficient PCB layouts. The FDS4935BZ MOSFETs are utilized extensively in industrial power supplies, motor controls, and switching circuits requiring reliable high-efficiency power transistors.
Enhancement mode P-Channel MOSFET optimized for power switching. Maximum continuous drain current of 6.9 A for robust load handling. 30 V maximum drain source voltage to support moderate voltage applications. Low Rds(on) resistance ensures minimal heat generation and power loss.
Surface mount 8-Pin SOIC package designed for compact electronics. Wide operating temperature range from -55°C to 150°C for harsh environments. Typical gate charge concentration allows for switching speed and efficiency.
Isolated dual P-Channel transistor configuration enhances system integration. Ideal for use in AC/DC power supplies, synchronous rectifiers, and motor drives.
Choose onsemi FDS4935BZ MOSFET for applications requiring reliable, efficient, and compact power management components. Explore other semiconductor solutions in the EnvMart catalog to fit your industrial and electronics engineering needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.9 A.
It supports a maximum drain-source voltage of 30 V.
The typical gate charge is 29 nC, which facilitates fast switching.
It has a maximum power dissipation capacity of 1.6 W.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate-source voltage rating is -25 V to +25 V.
The maximum drain-source resistance (Rds) is 22 mΩ.
It operates effectively in a temperature range from -55°C to 150°C.
This MOSFET comes in an 8-Pin SOIC surface mount package.
There are 2 P-Channel elements integrated per chip.
It is widely used in power management and synchronous rectification in AC/DC power supplies.
The channel mode of this model is enhancement mode.
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