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Infineon HEXFET N-Channel Power MOSFET 94A 200V Enhancement Mode TO-247 Package IRFP90N20DPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP90N20DPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 94A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 580W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 94 amperes suitable for demanding applications.
- Supports a maximum drain-source voltage of 200 volts for enhanced voltage control.
- Packaged in TO-247 with a 3-pin configuration for through-hole mounting.
- Enhancement mode channel with low on-resistance of 23 milliohms.
- Capable of dissipating up to 580 watts thermal power safely.
- Operational temperature range from -55°C to 175°C ensuring reliability across environments.
- Typical gate charge of 180 nanocoulombs at Vgs for efficient switching performance.
- Forward voltage drop of 1.5 volts offering reduced conduction losses.
Product Description
Infineon IRFP90N20DPBF is a high-performance HEXFET N-Channel Power MOSFET engineered for industrial and electronic circuits where robust switching and efficient power management are critical.
This device features a continuous drain current rating of 94A and can withstand a maximum drain-source voltage of 200V, making it ideal for power switching, amplification, and regulation tasks in devices ranging from power supplies to motor drives.
Constructed with an enhancement mode channel, the MOSFET delivers low on-resistance of 23mΩ, reducing conduction losses significantly and improving system efficiency. The TO-247 package allows easy through-hole mounting and effective heat dissipation with up to 580W power dissipation capacity.
The gate charge is optimized at 180nC to enable fast switching speeds and low gate drive losses, contributing to higher energy efficiency in high-frequency applications. Additionally, the device supports a wide operating temperature range from -55°C to 175°C, ensuring stable performance in demanding automotive, industrial, and electrical environments.
Its compact physical dimensions (20.3mm height, 15.9mm length, and 5.3mm width) allow flexible design integration while ensuring compliance with typical power hardware layouts. Maximum continuous drain current of 94A for heavy-duty power applications.
200V maximum drain-source voltage for robust electrical endurance. TO-247 package type with 3-pin through-hole mounting ease. Low on-resistance of 23mΩ enhancing energy efficiency. High power dissipation rating of 580W to maintain thermal stability.
Wide temperature range supports harsh environmental usage. Optimized gate charge for fast and efficient switching. Compact device dimensions for versatile application fits.
This Infineon MOSFET is widely used in industrial power electronics, motor control, power supply units, HVAC equipment, and other commercial and automotive power management systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 94 amperes, making it suitable for demanding power applications.
It supports a maximum drain-source voltage of 200 volts, providing enhanced voltage control for various applications.
This model is packaged in a TO-247 configuration, which allows for through-hole mounting.
The on-resistance of this MOSFET is 23 milliohms, which helps reduce conduction losses and improve energy efficiency.
It has a maximum power dissipation rating of 580 watts, ensuring thermal stability during operation.
The operational temperature range is from -55°C to 175°C, allowing reliable performance across various environments.
The typical gate charge is 180 nanocoulombs at Vgs, which contributes to efficient switching performance.
The forward voltage drop is 1.5 volts, which helps in reducing conduction losses in power management applications.
The dimensions are 20.3mm in height, 15.9mm in length, and 5.3mm in width, allowing for flexible design integration.
It features an enhancement mode N-channel, which is designed for efficient power management and switching.
This model is widely used in industrial power electronics, motor control, power supply units, and HVAC equipment.
The maximum gate-source voltage is -30V to +30V, ensuring compatibility with various gate drive circuits.
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