Infineon HEXFET N-Channel MOSFET 169 A 55 V Enhancement Mode 3-Pin TO-220 IRF1405PBF

Infineon IRF1405PBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device designed for power management and switching applications. Featuring a robust 169 ampere maximum continuous drain current capability and a 55 volt maximum drain-source voltage, this MOSFET suits demanding industrial, automotive, and electronics system uses.

The device uses enhancement mode operation providing efficient control of current flow with very low on-resistance of 5 milliohms that minimizes conduction losses and improves thermal performance. Its fast switching speeds with a typical gate charge of 170 nC facilitate high-frequency operation, ideal in power supplies, motor drives, converters, and inverters particularly in automated and renewable energy equipment.

Housed in a standard 3-pin TO-220 package for through-hole mounting, the IRF1405PBF offers ease of integration with effective thermal dissipation capacity of 330 W. Its wide operating temperature range from -55°C to 175°C guarantees reliable performance even under harsh conditions.

The maximum gate-source voltage of ±20 V protects the device from gate oxide breakdown and ensures stable operation. This MOSFET is commonly employed in industrial motor control circuits, power supply modules, and other high current switching applications requiring durability and efficiency.

Maximum continuous drain current of 169 A ensures high durability. Rated for 55 V drain-source voltage suitable for high voltage applications. Low drain-source resistance of 5 milliohms reduces power loss during operation.

Enhancement mode channel provides efficient switching and control. Fast switching capability improves overall system efficiency. Typical gate charge is 170 nC at 10 V gate-source voltage. Maximum gate-source voltage rating is ±20 V for safe operation.

Maximum power dissipation is 330 W supporting heavy loads. Operates reliably from -55°C to 175°C ensuring thermal endurance. Standard TO-220 package with 3 pins enables easy mounting and integration.

This power MOSFET is suitable for use in industrial electronics, motor drives, power supplies, converters, renewable energy systems, and automated machinery. Its reliable switching and high current handling capacity make it a valuable component in diverse electronics and electrical engineering applications.

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