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| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF9540NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 117mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 97nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| P-channel MOSFET,IRF9540N 23A 100VBrand | International Rectifier |
Infineon IRF9540NPBF is a HEXFET series P-channel MOSFET designed for high-performance electronic applications with a maximum continuous drain current of 23 A and a drain-source voltage of 100 V. It employs enhancement mode technology and comes in a 3-pin TO-220 package suitable for through-hole mounting. This MOSFET optimizes circuit efficiency with a low maximum drain-source resistance of 117 mΩ and supports power dissipation up to 140 W.
The device features a typical gate charge of 97 nC at 10 V, enabling rapid switching suitable for high-frequency operations. Its wide temperature range from -55°C up to 175°C allows reliable functioning in diverse environmental conditions. The maximum gate-source voltage ratings of -20 V to +20 V ensure safe electrical limits are maintained during use.
Infineon IRF9540NPBF MOSFET finds extensive use in power management circuits to facilitate efficient energy conversion, motor control systems for precise speed regulation, and power supply circuits to enhance operational reliability. It is also widely deployed in various automation systems for effective control functions, making it a versatile component across electronics and industrial applications.
Maximum continuous drain current up to 23 A. Maximum drain-source voltage of 100 V. Enhancement mode P-channel configuration. Low drain-source resistance of 117 mΩ maximizing efficiency. High power dissipation capability of 140 W.
Typical gate charge of 97 nC supports high-frequency switching. Operating temperature from -55°C to +175°C. Through-hole mounting with 3-pin TO-220 package. Ideal for power management, motor control, and automation systems.
This product is manufactured in China under Infineon's strict quality standards, suitable for industrial, laboratory, construction, and automation sectors. Explore more Infineon semiconductors and MOSFETs in our Electronics & Electricals section on EnvMart for reliable, high-performance electronic components.
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