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Infineon HEXFET Type P-Channel MOSFET 23 A 100 V Enhancement Mode 3-Pin TO-220 IRF9540NPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRF9540NPBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 23A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 117mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 140W
Typical Gate Charge Qg @ Vgs 97nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.6V
P-channel MOSFET,IRF9540N 23A 100VBrand International Rectifier

Key Features

  • Supports a maximum continuous drain current of 23 A for high power applications.
  • Operates reliably with a maximum drain-source voltage of 100 V.
  • Enhancement mode channel allows precise output control.
  • Features low maximum drain-source resistance of 117 mΩ for enhanced efficiency.
  • Capable of dissipating up to 140 W power during intensive use.
  • Typical gate charge of 97 nC enables fast switching.
  • Designed for through-hole mounting with 3-pin TO-220 package.
  • Wide operating temperature range from -55°C to +175°C ensures durability.

Product Description

Infineon IRF9540NPBF is a HEXFET series P-channel MOSFET designed for high-performance electronic applications with a maximum continuous drain current of 23 A and a drain-source voltage of 100 V. It employs enhancement mode technology and comes in a 3-pin TO-220 package suitable for through-hole mounting. This MOSFET optimizes circuit efficiency with a low maximum drain-source resistance of 117 mΩ and supports power dissipation up to 140 W.

The device features a typical gate charge of 97 nC at 10 V, enabling rapid switching suitable for high-frequency operations. Its wide temperature range from -55°C up to 175°C allows reliable functioning in diverse environmental conditions. The maximum gate-source voltage ratings of -20 V to +20 V ensure safe electrical limits are maintained during use.

Infineon IRF9540NPBF MOSFET finds extensive use in power management circuits to facilitate efficient energy conversion, motor control systems for precise speed regulation, and power supply circuits to enhance operational reliability. It is also widely deployed in various automation systems for effective control functions, making it a versatile component across electronics and industrial applications.

Maximum continuous drain current up to 23 A. Maximum drain-source voltage of 100 V. Enhancement mode P-channel configuration. Low drain-source resistance of 117 mΩ maximizing efficiency. High power dissipation capability of 140 W.

Typical gate charge of 97 nC supports high-frequency switching. Operating temperature from -55°C to +175°C. Through-hole mounting with 3-pin TO-220 package. Ideal for power management, motor control, and automation systems.

This product is manufactured in China under Infineon's strict quality standards, suitable for industrial, laboratory, construction, and automation sectors. Explore more Infineon semiconductors and MOSFETs in our Electronics & Electricals section on EnvMart for reliable, high-performance electronic components.

Infineon HEXFET Type P-Channel MOSFET 23 A 100 V Enhancement Mode 3-Pin TO-220 IRF9540NPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 23 A, suitable for high power applications.

It operates with a maximum drain-source voltage of 100 V, ensuring safe operation in various applications.

This model comes in a 3-pin TO-220 package, designed for through-hole mounting.

The typical gate charge is 97 nC at 10 V, allowing for rapid switching capabilities.

It can dissipate up to 140 W during intensive use, making it suitable for high-performance applications.

The IRF9540NPBF operates reliably within a temperature range of -55°C to +175°C.

The maximum gate-source voltage ratings are -20 V to +20 V, ensuring safe electrical limits during operation.

It features a low maximum drain-source resistance of 117 mΩ, enhancing circuit efficiency.

This model uses an enhancement mode P-channel configuration, allowing for precise output control.

The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.

It is widely used in power management circuits, motor control systems, and various automation systems for effective control functions.

This product is manufactured in China under Infineon's strict quality standards.

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