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Nexperia PUMH10,115 Digital Transistor 100 mA NPN 50 V 6-Pin SOT-363 PUMH10,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PUMH10,115
Width 2.2mm
Mount Type Surface
Series PUMH10
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 230MHz

Key Features

  • The device is an NPN transistor with integrated resistors suitable for digital logic applications.
  • Supports a maximum collector emitter voltage of 50 V ensuring reliable switching performance.
  • High transition frequency of 230 MHz for fast switching and signal amplification.
  • Wide operating temperature range from -65°C to 150°C for robust industrial use.
  • Pin count of 6 pins allows for dual transistor configuration with bias resistors.
  • Surface mount technology (SMT) package type suitable for automated PCB assembly.
  • Maximum power dissipation of 200 mW suitable for low power applications.
  • Conforms to RoHS standards and automotive grade AEC-Q101 certification.

Product Description

Nexperia PUMH10,115 digital transistor is designed for compact and efficient bipolar transistor applications requiring integrated bias resistors. This NPN dual transistor device supports a maximum collector current of 100 mA and voltage ratings up to 50 V, housed in a 6-pin SOT-363 surface mount package suitable for automated assembly processes.

The transistor's high transition frequency of 230 MHz enables high-speed switching and amplification, optimized for digital logic circuits. Its wide operating temperature range from -65°C to 150°C ensures reliable performance in harsh industrial, automotive, and commercial environments.

The device integrates dual resistors, facilitating direct interfacing with digital signals without additional external components. Its compact size of 2.2 mm × 2.2 mm × 1.1 mm supports space-saving PCB layouts.

This product complies with RoHS regulations and holds the automotive industry standard AEC-Q101, underscoring its suitability for automotive and industrial electronics applications.

Typical applications include digital switching, signal amplification, and bias resistor configurations in semiconductors. The product is manufactured in Malaysia, maintaining rigorous quality control and manufacturing standards.

The device is an NPN Digital Transistor with integrated resistors for easy digital interface. Maximum DC collector current: 100 mA. Maximum collector emitter voltage: 50 V. High switching speed with 230 MHz transition frequency.

Compact SOT-363 6-pin surface mount package. Wide temperature range: -65°C to 150°C. Maximum power dissipation: 200 mW. Meets RoHS compliance and automotive AEC-Q101 standards. Explore Nexperia products and related electronic components at EnvMart for industrial, automotive, and electronic circuit design requirements.

Nexperia PUMH10,115 Digital Transistor 100 mA NPN 50 V 6-Pin SOT-363 PUMH10,115
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Frequently Asked Questions

The maximum collector current for this model is 100 mA.

It supports a maximum collector-emitter voltage of 50 V.

The PUMH10,115 has a high transition frequency of 230 MHz, enabling fast switching and signal amplification.

It operates within a wide temperature range from -65°C to 150°C, suitable for various environments.

This transistor is housed in a 6-pin SOT-363 surface mount package, suitable for automated assembly.

The dimensions of the PUMH10,115 are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

This model conforms to RoHS standards and holds the automotive AEC-Q101 certification.

It is an NPN digital transistor with integrated resistors for easy interfacing with digital signals.

The maximum power dissipation for the PUMH10,115 is 200 mW, making it suitable for low power applications.

The minimum DC current gain (hFE) for the PUMH10,115 is 100.

The maximum emitter-base voltage (VEBO) for this transistor is 10 V.

Typical applications include digital switching, signal amplification, and bias resistor configurations in semiconductors.

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