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Nexperia Digital Transistor Dual Resistor Bipolar NPN + PNP 100 mA 50 V 6-Pin UMT PUMD48,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.2mm
Model PUMD48,115
Width 1.35mm
Mount Type Surface
Series PUMD48
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 180MHz

Key Features

  • This transistor features integrated resistors enabling direct drive from digital sources.
  • Suitable for surface mount applications with a footprint of 2.2 mm length, 1.35 mm width, and 1 mm height.
  • It provides a maximum power dissipation of 200 mW, ensuring reliable operation in compact circuits.
  • The device operates across a wide temperature range from -65°C to 150°C for industrial use.
  • Boasts a minimum DC current gain (hFE) of 80 and a transition frequency up to 180 MHz for high-speed digital switching.
  • Meets RoHS compliance standards and is manufactured in Malaysia.

Product Description

The Nexperia PUMD48,115 digital transistor is a robust dual resistor bipolar transistor that integrates both NPN and PNP transistors with built-in bias resistors. This design permits direct interfacing with digital logic circuits without additional external components. Packaged in a compact 6-pin UMT surface mount format with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height, it supports space-efficient PCB layouts.

Capable of handling a maximum DC collector current of 100 mA and collector emitter voltage of 50 V, this transistor offers versatile performance for a variety of electronic and industrial applications including power management, signal processing, and switching tasks.

The device dissipates up to 200 mW and operates reliably over an extended temperature range starting at -65°C up to 150°C, making it suitable for automotive, industrial, and consumer electronics environments. It provides a minimum DC current gain (hFE) of 80 and a frequency response up to 180 MHz, accommodating high-speed switching requirements.

Designed to comply with RoHS environmental standards, the transistor is manufactured in Malaysia and belongs to the PUMD48 series of digital transistors. Its dual transistor configuration and integrated resistors help simplify circuit design and reduce PCB space.

Integrated dual resistor design enables direct digital drive without external biasing. Compact 6-pin UMT surface mount package supports efficient PCB layout. Handles 100 mA collector current and up to 50 V collector-emitter voltage.

Wide operating temperature range from -65°C to 150°C for industrial reliability. High transition frequency of 180 MHz for fast digital switching applications. RoHS compliant and manufactured in Malaysia ensuring quality and environmental compliance.

This digital transistor is ideal for use in electronic components, semiconductor discrete transistors, and power management modules. It suits industrial automation circuits, consumer appliance electronics, telecommunications, and automotive electronic control units.

Explore a comprehensive range of semiconductor components and Digital Transistors at EnvMart to meet all your electronic design and manufacturing requirements.

Nexperia Digital Transistor Dual Resistor Bipolar NPN + PNP 100 mA 50 V 6-Pin UMT PUMD48,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This transistor comes in a compact 6-pin UMT surface mount package.

It operates reliably over a wide temperature range from -65°C to 150°C.

The maximum power dissipation for this digital transistor is 200 mW.

The minimum DC current gain (hFE) for this model is 80.

It has a maximum transition frequency of up to 180 MHz, suitable for high-speed digital switching applications.

Yes, it meets RoHS compliance standards.

This model features a dual transistor configuration with both NPN and PNP types.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum collector-emitter voltage (Vceo) is 50 V.

The maximum emitter-base voltage (VEBO) is 10 V.

This digital transistor is manufactured in Malaysia.

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