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Nexperia Digital Transistor 100 mA NPN 50 V 3-Pin UMT PDTC114TU,115

Category Digital Transistor Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.2mm
Model PDTC114TU,115
Width 1.35mm
Mount Type Surface
Series PDTC114T
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
onsemi SMUN5212T1G NPN Digital Transistor, 100 mA, 50 V, 3-Pin SOT-323Brand onsemi

Key Features

  • Maximum DC collector current of 100 mA.
  • Maximum collector-emitter voltage rating of 50 V.
  • Surface mount design suitable for compact PCB layouts.
  • Maximum power dissipation of 200 mW ensures reliable operation.
  • Minimum DC current gain (hFE) of 200 for efficient switching.
  • Operating temperature range from -65°C to 150°C.
  • Compact dimensions with length 2.2 mm, width 1.35 mm, and height 1 mm.
  • Single transistor configuration with NPN polarity.

Product Description

Nexperia PDTC114TU,115 digital transistor is a high-performance, resistor-equipped NPN transistor designed for digital electronics applications. It features a maximum DC collector current of 100 mA and can withstand up to 50 V across collector-emitter junctions.

The device comes in a compact 3-pin UMT surface-mount package with dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height, making it ideal for dense circuit boards requiring efficient space utilization.

Designed with integrated resistors, this transistor simplifies driving from digital outputs by eliminating the need for external bias resistors, enhancing design efficiency.

It offers a maximum power dissipation of 200 mW and an operating temperature range from -65°C up to 150°C, ensuring reliable performance under varying environmental conditions commonly encountered in industrial electronics, consumer devices, and embedded systems.

This digital transistor is ideal for switching, amplification, and signal processing tasks in laboratory instruments, industrial control systems, communication equipment, and HVAC electronics.

Maximum collector current: 100 mA. Collector-emitter voltage rating: 50 V. Surface mount 3-pin UMT package. Maximum power dissipation: 200 mW. Minimum DC gain (hFE): 200. Operating temperature range: -65°C to 150°C. Compact size for high-density PCB applications.

Single NPN transistor configuration. Integrated bias resistors for simplified circuit design. Manufactured in Malaysia.

This Nexperia transistor series PDTC114TU,115 offers a reliable solution for designers requiring digital transistors with integrated biasing, suitable for automated assembly processes and high-volume manufacturing.

Explore more semiconductor devices and Digital Transistors in the Electronics & Electricals category on EnvMart for your industrial and laboratory application needs.

Nexperia Digital Transistor 100 mA NPN 50 V 3-Pin UMT PDTC114TU,115
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Frequently Asked Questions

The maximum DC collector current of this digital transistor is 100 mA.

The collector-emitter voltage rating for this model is 50 V.

The operating temperature range for this NPN transistor is from -65°C to 150°C.

This model has dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The minimum DC current gain (hFE) for this transistor is 200.

The maximum power dissipation for this model is 200 mW.

This digital transistor uses a surface mount 3-pin UMT package.

The transistor configuration of this model is single NPN.

This digital transistor is suitable for switching, amplification, and signal processing tasks in various electronic applications.

The maximum emitter-base voltage (VEBO) for this model is 5 V.

The country of origin for this digital transistor is Malaysia.

This transistor features integrated resistors that simplify driving from digital outputs, eliminating the need for external bias resistors.

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