Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

onsemi Bipolar Transistor 600 mA NPN 40 V 4-Pin SOT-223 PZT2222AT1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.2mm
Length 6.5mm
Model PZT2222AT1G
Width 3.5mm
Mount Type Surface
Series PZT2222AT1G
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 300MHz
Nexperia Transistor, 600 mA NPN, 40 V, 4-Pin SOT-223Brand Nexperia

Key Features

  • The transistor features a maximum DC collector current of 600 mA for medium power applications.
  • It supports a maximum collector-emitter voltage of 40 V, suitable for low voltage switching.
  • Constructed in a compact SOT-223 surface-mount package for PCB integration.
  • The device has a high maximum collector-base voltage of 75 V ensuring robust switching performance.
  • It offers a minimum DC current gain (hFE) of 35, providing good amplification.
  • Rated for maximum power dissipation of 1.5 W ensuring thermal reliability.
  • The maximum transition frequency (ft) is 300 MHz for high frequency applications.
  • Designed to operate between temperatures of -55°C to 150°C for wide environmental tolerance.

Product Description

onsemi PZT2222AT1G Bipolar Transistor is a reliable general purpose NPN semiconductor device designed for robust electronic switching and amplification in industrial and commercial electronics.

This transistor supports a maximum DC collector current of 600 mA and can withstand a collector-emitter voltage of 40 V, making it suitable for low to medium power electronic circuits. Packaged in a compact 4-pin SOT-223 surface-mount package, it allows efficient PCB layout and thermal dissipation.

The transistor configuration is single and NPN polarity, ideal for switching and amplification tasks in signal processing, power control, and general semiconductor applications across industrial electronics and communication equipment.

Key electrical parameters include a maximum collector-base voltage of 75 V, minimum DC current gain of 35, and maximum power dissipation of 1.5 W. Its high transition frequency of 300 MHz supports high-speed switching needs, and it is engineered to operate reliably in temperature ranges from -55°C to 150°C, satisfying demanding operational environments.

Compliant with RoHS environmental standards and qualified to automotive AEC-Q101 standards under the PZT2222AT1G series, this transistor is suited for both commercial and automotive electronics.

The transistor features a maximum DC collector current of 600 mA for medium power applications. It supports a maximum collector-emitter voltage of 40 V, suitable for low voltage switching. Constructed in a compact SOT-223 surface-mount package for PCB integration.

The device has a high maximum collector-base voltage of 75 V ensuring robust switching performance. It offers a minimum DC current gain (hFE) of 35, providing good amplification. Rated for maximum power dissipation of 1.5 W ensuring thermal reliability.

The maximum transition frequency (ft) is 300 MHz for high frequency applications. Designed to operate between temperatures of -55°C to 150°C for wide environmental tolerance. Pin count is 4, facilitating easy mounting and connection.

This transistor is broadly applicable in electronic components, power control, signal amplification, and automotive electronics manufacturing. Explore more Semiconductors and Bipolar Transistors in EnvMart for additional options and specifications.

onsemi Bipolar Transistor 600 mA NPN 40 V 4-Pin SOT-223 PZT2222AT1G
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum DC collector current for the PZT2222AT1G is 600 mA, suitable for medium power applications.

This transistor supports a maximum collector-emitter voltage of 40 V, making it suitable for low voltage switching applications.

The PZT2222AT1G is packaged in a compact 4-pin SOT-223 surface-mount package, facilitating efficient PCB integration.

The maximum collector-base voltage for this model is 75 V, ensuring robust switching performance.

The minimum DC current gain (hFE) of the PZT2222AT1G is 35, providing good amplification for various applications.

This transistor is rated for a maximum power dissipation of 1.5 W, ensuring thermal reliability during operation.

The PZT2222AT1G operates reliably within a temperature range of -55°C to 150°C, accommodating a wide variety of environmental conditions.

The maximum transition frequency (ft) for the PZT2222AT1G is 300 MHz, supporting high-speed switching applications.

The dimensions of this model are 6.5 mm in length, 3.5 mm in width, and 1.2 mm in height.

This transistor is compliant with RoHS environmental standards and qualified to automotive AEC-Q101 standards.

The configuration of this transistor is single and NPN polarity, making it suitable for various switching and amplification tasks.

The maximum emitter-base voltage (VEBO) for the PZT2222AT1G is 6 V, which is important for ensuring proper operation in circuits.

Related Products

Recently Viewed Products

Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support