Infineon RF Bipolar Transistor, 150 mA, 12 V, 4-Pin SOT-343 NPN BFP196WNH6327XTSA1

Infineon BFP196WNH6327XTSA1 RF Bipolar Transistor is a high-performance NPN silicon planar epitaxial transistor designed for RF applications, especially in low noise and distortion wideband amplifier circuits. It comes in a 4-pin SOT-343 surface mount package that supports dual emitter architecture, ideal for compact and efficient PCB designs.

This transistor supports a maximum DC collector current (Idc) of 150 mA and can handle a maximum collector emitter voltage (Vceo) of 12 V, making it suitable for moderate power amplification tasks in RF circuits. The device dissipates up to 700 mW of power, ensuring stable operation under typical load conditions.

With a transition frequency (ft) of 7.5 GHz, the BFP196WNH6327XTSA1 transistor delivers excellent performance in high-frequency signal amplification, making it a suitable choice for communication and signal processing electronic equipment. It is designed to operate reliably within a broad temperature range from -55°C up to 150°C, catering to diverse environmental conditions.

The surface mount SOT-343 package provides easy integration on printed circuit boards while minimizing space requirements. Its 4-pin configuration allows for effective dual emitter transistor performance with NPN polarity, ensuring stable gain characteristics with a minimum DC current gain (hFE) of 70 and safe operation with maximum emitter base voltage of 2 V and collector base voltage of 20 V.

The transistor is compliant with JEDEC 47/20/22 standards for semiconductor devices, emphasizing its quality and reliability. While not certified for automotive standards, it is optimized for general electronic, industrial, laboratory, and communication applications including RF amplifiers and signal conditioners.

Designed for low noise and low distortion RF wideband amplifiers. Supports a maximum collector current of 150 mA and collector emitter voltage of 12 V. Operates up to 7.5 GHz transition frequency suitable for high-frequency applications.

Wide operating temperature range from -55°C to 150°C for stable performance. Compact 4-pin SOT-343 surface mount package for space-efficient PCB integration. Meets JEDEC 47/20/22 standards for semiconductor device quality assurance.

Stable gain with minimum DC current gain of 70 in NPN planar epitaxial transistor configuration. Maximum power dissipation of 700 mW supports moderate power applications. Explore more Infineon Bipolar Transistors and related semiconductor solutions on EnvMart for your industrial, electronic, and manufacturing needs.