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onsemi P-Channel MOSFET, 12 A, 60 V, 55W Power Dissipation, 3-Pin TO-252 Package NTD2955T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NTD2955T4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | NTD2955 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 55W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- This MOSFET features a type P channel with enhancement mode operation.
- Maximum continuous drain current is rated at 12 A for reliable performance.
- Drain source voltage maximum rating is 60 V.
- Forward voltage drop is typically 1.25 V ensuring efficient conduction.
- 3-pin surface mount TO-252 package optimizes PCB space and mounting.
- Maximum power dissipation capability is 55 W, allowing robust operation.
- Typical gate charge is 15 nC at specified gate-source voltage for switching efficiency.
- Operational temperature range from -55°C to 175°C supports harsh environments.
Product Description
onsemi NTD2955T4G is a P-Channel Power MOSFET designed for discrete semiconductor applications requiring efficient switching and power handling capability within electronic circuits.
This MOSFET offers a continuous drain current capacity of 12 A and a maximum drain source voltage of 60 V. It operates with an enhancement mode channel and exhibits a typical forward voltage of 1.25 V, making it suitable for power management and switching power supplies.
The device is housed in a compact 3-pin TO-252 surface mount package with dimensions approximately 6.73 mm length, 6.22 mm width, and 2.38 mm height, optimized for space-saving PCB layouts.
Power dissipation up to 55 W enables robust performance in demanding environments. Its typical gate charge of 15 nC facilitates efficient switching with minimal losses.
The MOSFET supports a broad operating temperature range from -55°C to 175°C, making it applicable in automotive and industrial settings. The device complies with automotive standard AEC-Q101, ensuring reliability and quality in stringent automotive applications.
This MOSFET features a type P channel with enhancement mode operation. Maximum continuous drain current is rated at 12 A for reliable performance. Drain source voltage maximum rating is 60 V. Forward voltage drop is typically 1.25 V ensuring efficient conduction.
3-pin surface mount TO-252 package optimizes PCB space and mounting. Maximum power dissipation capability is 55 W, allowing robust operation. Typical gate charge is 15 nC at specified gate-source voltage for switching efficiency.
Operational temperature range from -55°C to 175°C supports harsh environments. Maximum gate-source voltage is ±20 V to protect the device gate. Compliance with automotive standard AEC-Q101 assures automotive-grade quality.
This onsemi NTD2955T4G MOSFET is ideal for use in industrial power control units, automotive power management systems, electronic equipment design, and other applications demanding high reliability and efficiency.
EnvMart offers this semiconductor product with full technical support for electrical engineering applications across industries.
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Frequently Asked Questions
The maximum continuous drain current for the NTD2955T4G is rated at 12 A.
This model has a maximum drain source voltage rating of 60 V.
The NTD2955T4G can handle a maximum power dissipation of 55 W.
The typical forward voltage drop for this device is 1.25 V.
The dimensions of the TO-252 package are approximately 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
It operates within an extensive temperature range from -55°C to 175°C.
The typical gate charge at the specified gate-source voltage is 15 nC.
This device complies with the automotive standard AEC-Q101, ensuring its suitability for automotive applications.
This MOSFET features a 3-pin configuration.
The NTD2955T4G utilizes a type P channel with enhancement mode operation.
The maximum gate-source voltage is ±20 V, which protects the gate.
This model is designed for surface mounting.
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