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IXYS N-Channel Power MOSFET 26A 500V Enhancement Mode TO-247 3-Pin IXFH26N50P
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH26N50P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 26A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 230mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 400W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Equipped with fast intrinsic diode for improved switching performance.
- Packaged in robust TO-247 3-pin through-hole mount for easy PCB integration.
- Features an enhancement channel mode with low maximum drain-source resistance of 230 milliohms.
- Maximum power dissipation capacity is 400 watts ensuring high thermal tolerance.
- Operational temperature range from -55°C to 150°C suits industrial and commercial applications.
- Gate charge typically 60 nC at Vgs, supporting rapid switching.
- Maximum gate-source voltage rating of ±30 volts enhances robustness.
- Compact dimensions with height 21.46 mm, width 5.3 mm, and length 16.26 mm.
Product Description
IXYS IXFH26N50P N-Channel Power MOSFET from the HiperFET, Polar series offers high power handling with a continuous drain current rating of 26 amperes and a maximum drain-source voltage of 500 volts. Housed in a TO-247 3-pin through-hole package, this device supports robust mounting and efficient thermal management, suitable for demanding industrial and power electronics environments.
This enhancement-mode MOSFET features a very low maximum drain-source resistance of 230 milliohms to minimize power losses and an integrated fast intrinsic diode supporting high switching frequencies and efficiency.
The device's maximum power dissipation is rated at 400 watts, facilitating operation at elevated temperatures up to 150°C, with a minimum operating temperature of -55°C, allowing use in a wide range of environments.
Gate charge at 60 nC and a maximum gate-source voltage of ±30 V provide robust control and protection against voltage spikes. The forward voltage drop is 1.5 V, optimized for switching performance.
The IXFH26N50P's compact dimensions of 21.46 mm height, 5.3 mm width, and 16.26 mm length enable integration in space-constrained applications.
Designed and manufactured in the Philippines, this MOSFET is ideal for applications in power supplies, motor control, and industrial automation requiring reliable high-current switching performance.
Fast intrinsic diode for switching efficiency. TO-247 package suitable for through-hole mounting. Low Rds(on) ensures minimal conduction losses. High power dissipation supports demanding applications. Wide operating temperature range from -55°C to 150°C.
Robust gate charge characteristics. Compact physical dimensions. Manufactured in Philippines guaranteeing quality. Suitable for industrial and commercial power electronics. Explore our extensive category of Power MOSFETs for advanced semiconductor solutions in industrial, HVAC, manufacturing, and electronics applications at EnvMart.
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Frequently Asked Questions
The IXFH26N50P has a maximum continuous drain current rating of 26 amperes.
This model can handle a maximum drain-source voltage of 500 volts.
The IXFH26N50P is housed in a TO-247 package type, suitable for through-hole mounting.
It has a maximum power dissipation capacity of 400 watts, allowing for high thermal tolerance.
The typical gate charge at Vgs is 60 nC, which supports rapid switching capabilities.
The maximum gate-source voltage rating for this model is ±30 volts.
This model has dimensions of 21.46 mm in height, 5.3 mm in width, and 16.26 mm in length.
The operational temperature range is from -55°C to 150°C, making it suitable for various environments.
The IXFH26N50P features an N-channel type with enhancement mode characteristics.
The maximum drain-source resistance (Rds(on)) is 230 milliohms, which minimizes power losses.
This MOSFET is suitable for applications in power supplies, motor control, and industrial automation.
The IXFH26N50P is manufactured in the Philippines.
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