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IXYS HiperFET Polar N-Channel MOSFET 300 V 115 A Enhancement 4-Pin SOT-227 IXFN140N30P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.2mm |
| Model | IXFN140N30P |
| Width | 25.07mm |
| Mount Type | Panel |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 115A |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700W |
| Typical Gate Charge Qg @ Vgs | 185nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High power dissipation rating of 700 W for demanding applications.
- Package type is 4-pin SOT-227 suitable for panel mounting.
- Low drain source resistance of 24 mΩ for efficient conduction.
- Typical gate charge of 185 nC ensures fast switching capabilities.
- Wide operating temperature range from -55°C up to 150°C for durability.
- Fast intrinsic diode integrated for improved power efficiency.
- Maximum gate source voltage rating of -20 V to +20 V.
- Compact dimensions with length 38.2 mm, width 25.07 mm, and height 9.6 mm.
Product Description
IXYS IXFN140N30P is a high-performance Polar N-Channel Power MOSFET designed for demanding industrial and electronic applications. It features a maximum drain source voltage of 300 V and a high continuous drain current of 115 A, making it suitable for power management and switching in various sectors including industrial automation, power supplies, and motor controls.
This MOSFET uses an enhancement mode channel and incorporates IXYS's HiperFET and Polar technology for improved switching speed and efficiency. The device comes in a 4-Pin SOT-227 package designed for panel mounting, combining robust mechanical design with efficient thermal management capabilities.
Its low on-resistance of 24 milliohms and typical gate charge of 185 nanoCoulombs enable optimized conduction and switching performance, reducing losses and improving system reliability. The gate source voltage rating between -20 V and +20 V allows for flexible drive voltages while maintaining safe operation.
The device supports a wide operating temperature range from -55°C to 150°C, ensuring reliable service in harsh environmental conditions. Its compact physical dimensions with a length of 38.2 mm, width of 25.07 mm, and height of 9.6 mm make it adaptable for compact electronic designs.
Typical applications include industrial power systems, motor drivers, power supplies, and electronic switching. The integrated fast intrinsic diode further enhances its switching capabilities, reducing switching losses and improving response times.
High power dissipation capability of 700 watts for sustained power handling. Panel mount package type SOT-227 with 4 pins. Low Rds(on) resistance for improved efficiency. Gate charge optimized for fast switching applications.
Wide temperature range from -55°C to 150°C for robust performance. Compact dimensions suitable for industrial electronic circuits. Supports enhancement mode operation with N channel polarity. Maximum gate to source voltage tolerance of ±20 V.
This IXYS Power MOSFET ensures reliable, high-performance operation in a wide range of semiconductor and power management use cases. Explore the Electronics & Electricals category on EnvMart for a broad selection of high quality semiconductors and power components.
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Frequently Asked Questions
The maximum drain source voltage for this model is 300 V.
It can handle a maximum continuous drain current of 115 A.
The power dissipation rating is 700 W, suitable for demanding applications.
The dimensions are 38.2 mm in length, 25.07 mm in width, and 9.6 mm in height.
The typical gate charge is 185 nC, which ensures fast switching capabilities.
The maximum gate source voltage rating is -20 V to +20 V.
The low drain source resistance is 24 mΩ, which enhances conduction efficiency.
The operating temperature range is from -55°C to 150°C.
It comes in a 4-pin SOT-227 package designed for panel mounting.
This model uses an enhancement mode N-channel design.
It is suitable for applications such as industrial power systems, motor drivers, and power supplies.
It incorporates IXYS's HiperFET and Polar technology for improved switching speed and efficiency.
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