IXYS HiperFET Polar N-Channel MOSFET 110 A, 100 V, Enhancement Mode, 3-Pin TO-247 IXFH110N10P

IXYS IXFH110N10P is a high-performance N-channel power MOSFET from the HiperFET Polar series, engineered to provide excellent switching and conduction characteristics in power electronics applications. It supports a maximum continuous drain current of 110 A and is rated for a maximum drain-source voltage of 100 V, making it suitable for medium-voltage, high-current circuits.

The device operates in enhancement mode and features a low on-resistance of 15 milliohms, contributing to higher efficiency and reduced heat generation. Its package is a robust 3-pin TO-247, designed for through-hole mounting, facilitating secure installation in industrial and laboratory equipment.

Key electrical characteristics include a maximum power dissipation of 480 W and a maximum operating temperature of 175°C, allowing stable operation under demanding thermal conditions. The typical gate charge of 110 nC at the stated gate voltage ensures fast gating and switching, which is critical in power supply and motor control applications.

With a minimum operating temperature of -55°C, this MOSFET is suitable for use in harsh environments and industrial settings requiring a wide operating temperature range. The forward voltage of 1.5 V and a maximum gate-source voltage of ±20 V highlight the device’s robust design.

This IXYS HiperFET transistor is ideal for power management, motor drives, industrial control, and other electronic applications requiring efficient and reliable switching performance. Although it does not meet specific automotive standards, it is well-suited for general industrial and laboratory use.

The device supports a maximum continuous drain current of 110 amperes. It features a maximum drain source voltage rating of 100 volts. Designed with a low maximum drain source resistance of 15 milliohms to enhance efficiency.

Capable of dissipating up to 480 watts of power. Operates reliably across a wide temperature range from -55°C to 175°C. Typical gate charge is 110 nanocoulombs at the rated gate voltage. The MOSFET includes a fast intrinsic diode characteristic for improved switching.

Mount Type is through hole with 3-pin configuration for easy PCB integration. Package dimensions include a length of 16.26 mm, width of 5.3 mm, and height of 21.46 mm. Does not meet automotive standards and has no special certifications.

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