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Infineon IPA Type N-Channel MOSFET, 84 A, 40 V, 3-Pin TO-220 IPA80R1K2P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA80R1K2P7XKSA1 |
| Mount Type | Surface |
| Series | IPA |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 84A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.9mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET supports a maximum continuous drain current of 84 amps.
- It is rated for a maximum drain-source voltage of 40 volts.
- The low drain-source resistance of 2.9 milliohms improves efficiency.
- Typical gate charge is 80 nanoCoulombs at the specified gate voltage.
- Maximum power dissipation is 81 watts, allowing for robust operation.
- The device operates over a wide temperature range from -55 to 175 degrees Celsius.
- Designed for surface mount with a 3-pin TO-220 package type.
- It meets RoHS compliance and is suitable for power electronics applications.
Product Description
Infineon IPA80R1K2P7XKSA1 is a high-performance Type N-Channel MOSFET designed for efficient power switching and management. Built in a robust 3-pin TO-220 surface mount package, this MOSFET supports a maximum continuous drain current of 84 amperes and a maximum drain-source voltage of 40 volts, making it suitable for demanding power electronics environments.
Featuring a low maximum drain-source resistance of 2.9 milliohms, it enables energy-efficient operation with minimal conduction losses. The typical gate charge at the given gate-source voltage of 20 V is 80 nanoCoulombs, allowing for fast switching performance. The MOSFET sustains a maximum power dissipation of 81 watts, ensuring reliable function under high load.
The component is designed to operate reliably across an extended temperature range from -55°C to 175°C, accommodating various industrial and automotive applications. It complies with RoHS environmental standards, confirming its suitability in regulated manufacturing processes.
Its primary use cases include flyback converters in adapters and chargers, LED driver circuits, audio switch mode power supplies (SMPS), auxiliary power units, and various industrial power control applications. The surface mount TO-220 package aids in ease of assembly and integration into compact electronic designs.
Maximum continuous drain current of 84 A. Maximum drain-source voltage rating of 40 V. Low drain-source resistance of 2.9 mΩ ensures efficiency. Typical gate charge of 80 nC allows fast switching. Power dissipation rating of 81 W for robust performance.
Wide operating temperature range from -55°C to 175°C. 3-pin TO-220 surface mount package type. RoHS compliant for environmentally safe use. Ideal for industrial, automotive, and LED driver applications.
This MOSFET is a reliable choice for industrial and commercial electronic designs, balancing high current capacity with efficient switching performance and thermal resilience. Explore more Infineon semiconductor products on EnvMart for advanced electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 84 amperes.
This MOSFET has a maximum drain-source voltage rating of 40 volts.
It features a low maximum drain-source resistance of 2.9 milliohms, which enhances efficiency.
The typical gate charge at a gate-source voltage of 20 V is 80 nanoCoulombs.
The maximum power dissipation rating is 81 watts, allowing for robust operation.
It operates over a wide temperature range from -55°C to 175°C.
This unit is designed in a 3-pin TO-220 surface mount package type.
Yes, it meets RoHS compliance, confirming its suitability for environmentally safe use.
It is suitable for applications such as flyback converters, LED driver circuits, and audio switch mode power supplies.
The maximum gate-source voltage for this model is 20 volts.
This model is a Type N-Channel MOSFET.
The country of origin for this MOSFET is India.
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