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Vishay P-Channel MOSFET 12 A 30 V PowerPAK SC-70 Surface Mount SiA4263DJ Series SIA4263DJ-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIA4263DJ-T1-GE3 |
| Mount Type | Surface |
| Series | SiA4263DJ |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 199mΩ |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 19.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
Key Features
- 12 ampere maximum continuous drain current supports high current applications.
- Maximum drain-source voltage of 30 volts for medium voltage circuits.
- Surface mount PowerPAK SC-70 package enables compact PCB layouts.
- Low maximum drain-source resistance of 199 milliohms enhances efficiency.
- Typical gate charge of 19.8 nanocoulombs improves switching performance.
- Supports operating temperatures from -55°C to 150°C.
- Maximum gate-source voltage of ±8 volts ensures safe gate drive.
- Power dissipation up to 15.6 watts for thermal management in power circuits.
Product Description
Vishay introduces the SIA4263DJ-T1-GE3, a high-performance P-Channel MOSFET designed for diverse power management applications. This transistor supports a maximum continuous drain current of 12 A and operates at a maximum drain-source voltage of 30 V, making it ideal for battery management and load switching in mobile and industrial devices.
Encapsulated in a compact PowerPAK SC-70 surface mount package, the MOSFET facilitates efficient PCB space utilization without compromising thermal and electrical performance. It features a low maximum drain-source resistance (Rds) of 199 mΩ, which minimizes conduction losses during operation. The gate charge is optimized at 19.8 nC, enhancing switching speed suitable for power-efficient designs.
The device operates reliably across wide temperature ranges from -55°C to 150°C, catering to demanding industrial and automotive electronics environments. Its gate-source voltage tolerance of ±8 V offers robustness against voltage spikes, ensuring durability and long-term reliability.
RoHS compliant, this MOSFET aligns with environmental standards. Typical applications include battery switches, load switches, and power amplifier switches. The SIA4263DJ series is 100% Rg and UIS tested to guarantee consistent quality and performance.
12 A maximum continuous drain current supports demanding current loads. 30 V maximum drain-source voltage for medium voltage power circuits. Surface mount PowerPAK SC-70 package allows compact and efficient PCB designs. Low Rds(on) of 199 mΩ reduces power losses and improves efficiency.
Optimized gate charge ensures faster switching capabilities. Wide operating temperature range from -55°C to 150°C for harsh environments. ±8 V gate-source voltage tolerance protects against voltage transients. Compliant with RoHS directives for environmental safety.
This MOSFET is suited for electronic, industrial, and automotive power management use cases, providing reliable switching and control solutions. Explore the full range of Power MOSFETs at EnvMart for your semiconductor and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A, making it suitable for high current applications.
It has a maximum drain-source voltage of 30 V, which is suitable for medium voltage circuits.
This MOSFET comes in a PowerPAK SC-70 surface mount package, allowing for compact PCB layouts.
The maximum power dissipation for the SIA4263DJ-T1-GE3 is 15.6 W, which aids in thermal management during operation.
The typical gate charge is 19.8 nanocoulombs, which enhances the switching performance of the device.
It operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.
The maximum gate-source voltage is ±8 V, providing protection against voltage spikes.
The maximum drain-source resistance is 199 milliohms, which helps to reduce conduction losses during operation.
Yes, this MOSFET is compliant with RoHS directives, aligning with environmental safety standards.
It is suited for applications such as battery switches, load switches, and power amplifier switches in various electronic devices.
The country of origin for this product is India.
This model belongs to the SiA4263DJ series of P-Channel MOSFETs.
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