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Vishay P-Channel MOSFET 19 A, 100 V Enhancement Mode, TO-220 Package IRF9540PBF

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Vishay P-Channel MOSFET 19 A, 100 V Enhancement Mode, TO-220 Package IRF9540PBF

Name: Vishay P-Channel MOSFET 19 A, 100 V Enhancement Mode, TO-220 Package IRF9540PBF
Brand: Vishay
SKU: 217642
Price: 1.19 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	9.01mm
Length	10.41mm
Model	IRF9540PBF
Width	4.7mm
Mount Type	Through Hole
Series	IRF9540
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	19A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	200mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150W
Typical Gate Charge Qg @ Vgs	61nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-5V

Key Features

This device operates in enhancement mode and features a maximum power dissipation of 150 W.
It has a maximum drain-source resistance of 200 mΩ, ensuring efficient conduction.
The MOSFET supports gate-source voltages up to ±20 V and has a typical gate charge of 61 nC at Vgs.
Engineered for through-hole mounting, it measures 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
Suitable for industrial power electronics applications, it operates reliably from -55°C up to 175°C maximum temperature.

Product Description

Vishay IRF9540PBF is a high-performance P-Channel MOSFET designed for power electronics applications requiring efficient switching and amplification. With a maximum continuous drain current of 19 A and a maximum drain-source voltage of 100 V, this semiconductor device operates in enhancement mode to provide reliable control of current flow. Its TO-220 package with three pins allows for easy through-hole mounting on printed circuit boards.

The IRF9540PBF features a maximum drain-source resistance of 200 mΩ, which contributes to reducing power losses during operation. It supports a gate-source voltage range of -20 V to +20 V and has a typical gate charge of 61 nC, enabling fast switching capabilities while minimizing gate drive power requirements.

Thermally robust, it can handle a maximum power dissipation of 150 W and operate across a broad temperature range from -55°C to 175°C, ensuring stable performance in demanding industrial, automotive, and power management environments.

Physically, the device measures 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width, allowing compact integration while maintaining adequate heat dissipation. It does not conform to specific automotive standards but is suitable for various electronic and power applications.

Enhancement mode P-Channel MOSFET guaranteeing reliable switching behavior. High maximum continuous drain current of 19 A for robust power handling. Maximum power dissipation rated at 150 W for thermal resilience. 3-pin TO-220 package designed for through-hole mounting.

Wide operating temperature range from -55°C to 175°C. Maximum gate-source voltage of ±20 V supports flexible control. Compact dimensions suitable for power electronics circuits.

This MOSFET is ideal for industrial power electronics, consumer electronics, and other electrical engineering applications requiring high current, voltage handling, and efficient switching performance. Explore the Electronics & Electricals category on EnvMart to find more Vishay semiconductors and power components.