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Vishay P-Channel MOSFET 2.3 A 20 V Enhancement 3-Pin SOT-23 SI2301CDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2301CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2301CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 112mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 860mW |
| Typical Gate Charge Qg @ Vgs | 5.5nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET provides efficient surface mount installation.
- Features enhancement mode operation for precise switching.
- The device supports a maximum power dissipation of 860 mW for reliable thermal performance.
- Operates in temperature ranges from -55°C to 150°C, suitable for demanding environments.
- Has a low maximum drain source resistance of 112 mΩ to reduce power losses.
- Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height optimize board space.
- Typical gate charge of 5.5 nC enables fast switching speeds.
- Forward voltage of -1.2 V improves conduction characteristics.
Product Description
Vishay SI2301CDS-T1-GE3 is a high-performance P-Channel MOSFET designed for surface mount applications requiring reliable switching and power handling. With a maximum continuous drain current of 2.3 A and a drain source voltage of 20 V, this device suits a variety of compact electronic circuits.
The enhancement channel mode ensures optimal control, and the low Rds(on) of 112 mΩ minimizes power dissipation to 860 mW, supporting efficient thermal management. It operates effectively over a wide temperature range from -55°C to 150°C, making it suitable for both industrial and commercial electronic equipment.
Its small SOT-23 3-pin package offers space-saving mounting, with precise dimensions of length 3.04 mm, width 1.4 mm, and height 1.02 mm. The MOSFET features a typical gate charge of 5.5 nC at Vgs, allowing quick switching for power control circuits, and a forward voltage of -1.2 V to enhance conduction efficiency.
This device is primarily used in power management, signal switching, and control circuits within industrial, laboratory, and commercial electronics applications. The P-channel configuration facilitates high-side switching in compact designs.
This MOSFET provides efficient surface mount installation. Features enhancement mode operation for precise switching. The device supports a maximum power dissipation of 860 mW for reliable thermal performance. Operates in temperature ranges from -55°C to 150°C, suitable for demanding environments.
Has a low maximum drain source resistance of 112 mΩ to reduce power losses. Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height optimize board space. Typical gate charge of 5.5 nC enables fast switching speeds.
Forward voltage of -1.2 V improves conduction characteristics. Designed for use in electronic and power management applications. Explore more discrete semiconductors and MOSFET components on EnvMart to find ideal parts for your electronic designs and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.3 A.
It can handle a maximum drain source voltage of 20 V.
This MOSFET supports a maximum power dissipation of 860 mW.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
It operates effectively over a temperature range from -55°C to 150°C.
The typical gate charge is 5.5 nC at Vgs.
The maximum gate source voltage is -8 V to +8 V.
It comes in a SOT-23 package type.
The maximum drain source resistance is 112 mΩ.
This device utilizes a P-channel configuration.
It is commonly used in power management, signal switching, and control circuits within industrial and commercial electronics applications.
The forward voltage is -1.2 V, which improves conduction characteristics.
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