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Vishay P-Channel MOSFET 11 A 200 V Enhancement 3-Pin TO-220 IRF9640PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF9640PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF9640 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5V |
| P-channel MOSFET,IRF9640 11A 200VBrand | Vishay |
Key Features
- Suitable for high power switching applications in electronic circuits.
- Through-hole mount type with 3-pin configuration for easy PCB integration.
- Enhancement mode operation for efficient control and performance.
- Maximum power dissipation of 125 W for robust thermal management.
- Wide operating temperature range from -55°C to 150°C ensures reliability.
- Low maximum drain-source resistance of 500 mΩ reduces power loss.
- Typical gate charge of 44 nC allows fast switching capabilities.
- Maximum gate-source voltage rating of -20 V to +20 V for flexible drive conditions.
Product Description
The Vishay IRF9640PBF is a high-performance P-Channel MOSFET designed for electronic applications requiring reliable power control. It supports a maximum continuous drain current of 11 A and can handle a drain-source voltage up to 200 V. Packaged in a TO-220 form factor, this device is suitable for through-hole mounting, providing ease of use in various electronic assemblies.
Operating in enhancement mode, the IRF9640PBF is optimized for efficient switching and power dissipation of up to 125 W. It operates reliably across a wide temperature range from -55°C to 150°C, making it robust for industrial, laboratory, HVAC, and manufacturing environments. The device features a low drain-source resistance of 500 mΩ, minimizing conduction losses and improving energy efficiency.
Additional device characteristics include a typical gate charge of 44 nC and a gate-source voltage rating of -20 V to +20 V, ensuring fast switching and secure gate operation. Its compact physical dimensions (length 10.41 mm, height 9.01 mm, width 4.7 mm) facilitate integration into dense circuits and power assemblies.
This MOSFET is specifically tailored for discrete semiconductor requirements in power electronics and control systems. Its rugged design and electrical parameters make it ideal for industrial power management, switching regulators, and signal amplification applications.
Suitable for high power switching applications in electronic circuits. Through-hole mount type with 3-pin configuration for easy PCB integration. Enhancement mode operation for efficient control and performance. Maximum power dissipation of 125 W for robust thermal management.
Wide operating temperature range from -55°C to 150°C ensures reliability. Low maximum drain-source resistance of 500 mΩ reduces power loss. Typical gate charge of 44 nC allows fast switching capabilities. Maximum gate-source voltage rating of -20 V to +20 V for flexible drive conditions.
Compact dimensions with 10.41 mm length, 9.01 mm height, and 4.7 mm width.
This product is included in the MOSFET category of electronic components, suitable for semiconductor applications in electronics manufacturing and repair. Explore more Vishay MOSFET devices and related semiconductors at EnvMart for your industrial and commercial power control needs.
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Frequently Asked Questions
The maximum continuous drain current for the IRF9640PBF is 11 A.
This model can handle a maximum drain-source voltage of 200 V.
It has a maximum power dissipation of 125 W, allowing for robust thermal management.
The IRF9640PBF operates reliably within a temperature range of -55°C to 150°C.
It features a low maximum drain-source resistance of 500 mΩ, which helps reduce power loss.
The typical gate charge is 44 nC, enabling fast switching capabilities.
This unit is designed for through-hole mounting with a 3-pin configuration.
The dimensions are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
It has a maximum gate-source voltage rating of -20 V to +20 V, providing flexibility in drive conditions.
This MOSFET is a P-channel type, optimized for enhancement mode operation.
It is suitable for high power switching applications in electronic circuits, including industrial power management and signal amplification.
The country of origin for this product is India.
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