Infineon ISC Type N-Channel MOSFET, 75 A Current, 100 V Voltage, 8-Pin TDSON Surface Mount ISC080N10NM6ATMA1

Infineon ISC080N10NM6ATMA1 is a Type N-channel MOSFET expertly engineered to handle high current power switching tasks. This device offers a maximum continuous drain current of 75 A and a drain-source voltage rating of 100 V, making it highly suitable for advanced power electronics applications. Packaged in a compact 8-pin TDSON surface-mount format, it enables efficient PCB design with robust mechanical and electrical stability.

The device delivers excellent efficiency through its low maximum drain-source resistance of 8.05 mOhm, which reduces conduction losses during operation. It supports a power dissipation rating of 100 W, allowing it to handle demanding thermal loads reliably. The wide operating temperature range from -55°C to 175°C ensures suitability for use in harsh or thermally challenging environments.

The gate drive requirements are characterized by a typical total gate charge of 24 nC at a maximum gate-source voltage of 20 V, which allows predictable switching performance and reduced gate drive power consumption. The forward voltage drop is typically 1 V, aiding in efficient switching circuits.

This MOSFET is ideal for industrial and commercial applications including DC-DC converter output stages, synchronous rectifiers for high current demands, motor drive half-bridge circuits in compact inverters, power distribution switching on PCB boards, and primary or secondary stages in switch-mode power supplies.

The physical dimensions of the device are 6.1 mm in length, 1.2 mm in width, and 5.35 mm in height, facilitating compact mounting and integration in sophisticated electronic systems.

Supports 75 A continuous drain current for high-load demands. Maximum drain-source voltage of 100 V for reliable power stages. Low Rds(on) of 8.05 mOhm reduces power losses. 100 W power dissipation allows operational thermal endurance.

Wide temperature tolerance range (-55°C to 175°C) for harsh environments. Compact 8-pin TDSON surface mount package for space saving. Typical gate charge of 24 nC at Vgs max 20 V for efficient switching. Effective for motor drives, DC-DC converters, and power supplies.

Explore the full range of semiconductor MOSFETs with Infineon products at EnvMart to suit diverse industrial and electronic design needs.