$6.59
$6.40
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 41.07mm |
| Length | 15.87mm |
| Model | NTHL099N60S5 |
| Width | 4.82mm |
| Mount Type | Surface |
| Series | SUPERFET V |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 99mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 184W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
| Internal Gate Resistance | 6.9 Ω |
onsemi NTHL099N60S5 is a high-performance SUPERFET V series N-Channel Enhancement MOSFET delivering superior conduction and switching efficiency. It is engineered to provide best-in-class FOMs (RDS(on)·Qg and RDS(on)·EOSS), enabling improved efficiency for both heavy and light load conditions.
The 600 V rating and 33 A maximum continuous drain current make this MOSFET ideal for a wide range of industrial and commercial power electronics applications. Its ultra-low typical gate charge of 48 nC and low time-related output capacitance contribute to low switching losses and excellent system efficiency.
Packaged in a 3-pin TO-247 surface mount housing, the device offers robust thermal handling with a maximum power dissipation of 184 W and supports operation across a wide temperature range from -55°C up to 175°C. The internal gate resistance of 6.9 Ω assists in managing switching transients, while the device’s high dV/dt ratings help reduce electromagnetic interference (EMI) in demanding switching environments.
This MOSFET is 100% avalanche tested and RoHS compliant, ensuring reliable operation and adherence to environmental standards. Typical forward voltage is 1.2 V, and the device features enhancement mode operation, facilitating easy drive for both hard and soft switching topologies.
Maximum continuous drain current of 33 A for high current applications. 600 V maximum drain-source voltage rating for high voltage systems. Low gate charge (48 nC typical) reduces switching losses. High maximum power dissipation up to 184 W for thermal robustness.
Compact TO-247 package suitable for surface mounting on PCBs. Wide operating temperature range (-55°C to 175°C) enhances reliability. Internal gate resistance of 6.9 Ω stabilizes switching behavior. High dV/dt ratings minimize EMI during switching.
100% avalanche tested for quality and robustness. RoHS compliant ensuring environmental safety.
This MOSFET is widely applicable in industries such as power electronics manufacturing, industrial control systems, automotive electronics, and renewable energy systems where robust and efficient switching devices are required. The TO-247 package ensures ease of integration on power PCBs used in converters and inverters, motor controls, and power supplies.
Explore more high-grade semiconductor devices in the MOSFET category at EnvMart to design your efficient and reliable power electronic solutions.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent