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onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 41.07mm
Length 15.87mm
Model NTHL099N60S5
Width 4.82mm
Mount Type Surface
Series SUPERFET V
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 33A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 99mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 184W
Typical Gate Charge Qg @ Vgs 48nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V
Internal Gate Resistance 6.9 Ω

Key Features

  • Maximum continuous drain current of 33 amperes suitable for power applications.
  • Rated for a maximum drain-source voltage of 600 volts for high voltage tolerance.
  • Low typical gate charge of 48 nC reduces switching losses effectively.
  • Maximum power dissipation of 184 watts ensures robust thermal handling.
  • Compact TO-247 surface mount package type with 3 pins for easy integration.
  • Maximum drain-source resistance of 99 milliohms for efficient conduction.
  • Wide operating temperature range from -55°C to 175°C for reliability.
  • Internal gate resistance of 6.9 ohms optimizes switching performance.

Product Description

onsemi NTHL099N60S5 is a high-performance SUPERFET V series N-Channel Enhancement MOSFET delivering superior conduction and switching efficiency. It is engineered to provide best-in-class FOMs (RDS(on)·Qg and RDS(on)·EOSS), enabling improved efficiency for both heavy and light load conditions.

The 600 V rating and 33 A maximum continuous drain current make this MOSFET ideal for a wide range of industrial and commercial power electronics applications. Its ultra-low typical gate charge of 48 nC and low time-related output capacitance contribute to low switching losses and excellent system efficiency.

Packaged in a 3-pin TO-247 surface mount housing, the device offers robust thermal handling with a maximum power dissipation of 184 W and supports operation across a wide temperature range from -55°C up to 175°C. The internal gate resistance of 6.9 Ω assists in managing switching transients, while the device’s high dV/dt ratings help reduce electromagnetic interference (EMI) in demanding switching environments.

This MOSFET is 100% avalanche tested and RoHS compliant, ensuring reliable operation and adherence to environmental standards. Typical forward voltage is 1.2 V, and the device features enhancement mode operation, facilitating easy drive for both hard and soft switching topologies.

Maximum continuous drain current of 33 A for high current applications. 600 V maximum drain-source voltage rating for high voltage systems. Low gate charge (48 nC typical) reduces switching losses. High maximum power dissipation up to 184 W for thermal robustness.

Compact TO-247 package suitable for surface mounting on PCBs. Wide operating temperature range (-55°C to 175°C) enhances reliability. Internal gate resistance of 6.9 Ω stabilizes switching behavior. High dV/dt ratings minimize EMI during switching.

100% avalanche tested for quality and robustness. RoHS compliant ensuring environmental safety.

This MOSFET is widely applicable in industries such as power electronics manufacturing, industrial control systems, automotive electronics, and renewable energy systems where robust and efficient switching devices are required. The TO-247 package ensures ease of integration on power PCBs used in converters and inverters, motor controls, and power supplies.

Explore more high-grade semiconductor devices in the MOSFET category at EnvMart to design your efficient and reliable power electronic solutions.

onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 NTHL099N60S5
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Frequently Asked Questions

The maximum continuous drain current for this model is 33 A.

It has a maximum drain-source voltage rating of 600 V.

The typical gate charge is 48 nC, which helps reduce switching losses.

The maximum power dissipation is 184 W, ensuring robust thermal handling.

The TO-247 package dimensions are 41.07 mm in height, 15.87 mm in length, and 4.82 mm in width.

The internal gate resistance is 6.9 Ω, optimizing switching performance.

It operates within a wide temperature range from -55°C to 175°C.

This model features a Type N channel with enhancement mode operation.

Yes, this model is RoHS compliant, ensuring adherence to environmental standards.

It is suitable for power electronics manufacturing, industrial control systems, automotive electronics, and renewable energy systems.

The maximum gate-source voltage for this device is 30 V.

The maximum drain-source resistance is 99 milliohms, which supports efficient conduction.

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